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Quantify point defects in monolayer tungsten diselenide

机译：量化单层钨蛋白酶的点缺陷

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摘要

Point defects may significantly influence the electrical and optoelectronic properties of two-dimensional (2D) tungsten diselenide (WSe2), while precise information about point defects distribution (e.g. species and concentration) in monolayer (ML-) WSe2 are hard to obtain. In this letter, we tried to partly fill this knowledge gap via performing quantitative and statistical analysis of intrinsic point defects in WSe2 monolayers prepared by three so-called main-stream approaches i.e. mechanical exfoliation (ME), chemical vapor deposition (CVD), and molecular beam epitaxy (MBE), which are promising for providing high-quality samples. Via a conjunction of statistic atomic-resolution annular dark-field scanning transmission electron microscopy imaging, software-based automated defect identification and counting, together with image simulations, defect species and concentrations were quantitatively determined. Seven types of intrinsic point defects were identified in ML-WSe2 and the most dominant one is selenium mono-vacancy (V-Se) (corresponding to one Se atom missing), irrespective of the synthetic route and growth conditions. Exact contents and diversity of point defects depend on the specific preparation method: CVD grown ML-WSe2 is the most defective (for example, the density of V-Se reaches 1.48% in atomic ratio), followed by ME (similar to 0.85 at% for V-Se) and MBE grown samples (similar to 0.49 at% for V-Se). Our results, though still with limited sampling, provide preliminary quantitative information of point defects in ML-WSe2, which can serve as a reference to achieve the precisely controlled large-scale sample growth and establish the structure-property relationship of 2D transition-metal dichalcogenides materials.
机译：点缺陷可能会显著影响二维（2D）二硒化钨（WSe2）的电学和光电性能，但很难获得单层（ML-）WSe2中点缺陷分布（例如种类和浓度）的精确信息。在这封信中，我们试图通过对WSe2单分子膜中的固有点缺陷进行定量和统计分析，部分填补这一知识空白。WSe2单分子膜由三种所谓的主流方法制备，即机械剥离（ME）、化学气相沉积（CVD）和分子束外延（MBE），它们有望提供高质量的样品。通过结合统计原子分辨率环形暗场扫描透射电子显微镜成像、基于软件的自动缺陷识别和计数，以及图像模拟，定量确定了缺陷种类和浓度。在ML-WSe2中发现了七种类型的固有点缺陷，其中最主要的是硒单空位（V-Se）（对应于一个硒原子缺失），与合成路线和生长条件无关。点缺陷的确切含量和多样性取决于具体的制备方法：CVD生长的ML-WSe2缺陷最大（例如，V-Se的原子比密度达到1.48%），其次是ME（类似于V-Se的0.85 at%）和MBE生长的样品（类似于V-Se的0.49 at%）。我们的研究结果虽然取样有限，但提供了ML-WSe2中点缺陷的初步定量信息，可作为实现精确控制大规模样品生长和建立二维过渡金属二卤化物材料结构-性能关系的参考。

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  • 来源
    《Nanotechnology》 |2021年第25期|共9页
  • 作者

    Ding Sujuan; Lin Fang; Jin Chuanhong;

  • 作者单位

    Xiangtan Univ Hunan Inst Adv Sensing &

    Informat Technol Xiangtan 411105 Hunan Peoples R China;

    South China Agr Univ Coll Elect Engn Guangzhou 510642 Guangdong Peoples R China;

    Xiangtan Univ Hunan Inst Adv Sensing &

    Informat Technol Xiangtan 411105 Hunan Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 特种结构材料;
  • 关键词

    WSe2; intrinsic point defects; ADF-STEM;

    机译：WSe2;固有点缺陷;ADF-STEM;

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