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Improved quality of InSb-on-insulator microstructures by flash annealing into melt

机译：通过Flash退火将Ins-Insulator微观结构的质量提高到熔体中

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摘要

Monolithic integration of III-V semiconductors with Silicon technology has instigated a wide range of new possibilities in the semiconductor industry, such as combination of digital circuits with optical sensing and high-frequency communication. A promising CMOS compatible integration process is rapid melt growth (RMG) that can yield high quality single crystalline material at low cost. This paper represents the study on ultra-thin InSb-on-insulator microstructures integrated on a Si platform by a RMG-like process. We utilize flash lamp annealing (FLA) to melt and recrystallize the InSb material for an ultra-short duration (milliseconds), to reduce the thermal budget necessary for integration with Si technology. We compare the result from FLA to regular rapid thermal annealing (seconds). Recrystallized InSb was characterized using electron back scatter diffraction which indicate a transition from nanocrystalline structure to a crystal structure with grain sizes exceeding 1 mu m after the process. We further see a 100x improvement in electrical resistivity by FLA annealed sample when compared to the as-deposited InSb with an average Hall mobility of 3100 cm(2) V-1 s(-1) making this a promising step towards realizing monolithic mid-infrared detectors and quantum devices based on InSb.
机译：III-V半导体与硅技术的单片集成在半导体行业引发了广泛的新可能性，例如数字电路与光学传感和高频通信的结合。一种很有前途的CMOS兼容集成工艺是快速熔融生长（RMG），它可以以低成本生产出高质量的单晶材料。本文研究了用类RMG工艺在硅平台上集成超薄InSb绝缘体微结构。我们利用闪光灯退火（FLA）在超短时间（毫秒）内熔化和再结晶InSb材料，以减少与Si技术集成所需的热预算。我们比较了FLA和常规快速热退火（秒）的结果。利用电子背散射衍射对再结晶的InSb进行了表征，表明在该工艺后，InSb从纳米晶体结构转变为晶粒尺寸超过1μm的晶体结构。我们进一步看到，与沉积态InSb相比，FLA退火样品的电阻率提高了100倍，平均霍尔迁移率为3100 cm（2）V-1 s（-1），这是实现基于InSb的单片中红外探测器和量子器件的一个有希望的步骤。

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