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首页> 外文期刊>Optics Letters >Detection of ion implantation in focused ion beam processing by scattering-type scanning near-field optical microscopy
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Detection of ion implantation in focused ion beam processing by scattering-type scanning near-field optical microscopy

机译:通过散射型扫描近场光学显微镜检测聚焦离子束处理中的离子注入

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摘要

We employed scattering-type scanning near-field optical microscopy (s-SNOM) to explore the implantation of gallium ions in a silicon substrate after focused ion beam (FIB) etching. Different ion doses were applied, and the s-SNOM amplitude image contrast between the processed and unprocessed regions was investigated. The results demonstrate that the contrast decreases along with the increase of the ion dose. A similar dependence of the residual gallli um element concentration on the ion dose is found from the energy dispersive spectroscopy. Such comparisons imply that s-SNOM imaging is sensitive to the implanted ions. The s-SNOM aided analysis of FIB etching can benefit the fabrication optimization, especially when the processed materials' properties are of critical importance. (C) 2021 Optical Society of America
机译:我们利用散射型扫描近场光学显微镜(s-SNOM)研究了聚焦离子束(FIB)刻蚀后镓离子在硅衬底中的注入。应用不同的离子剂量,研究了处理区和未处理区的s-SNOM振幅图像对比度。结果表明,随着离子剂量的增加,对比度降低。从能量色散光谱中发现,残余镓元素浓度与离子剂量有类似的依赖关系。这种比较意味着s-SNOM成像对注入的离子很敏感。s-SNOM辅助分析FIB腐蚀有助于制造优化,尤其是在加工材料的性能至关重要的情况下。(2021)美国光学学会

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  • 来源
    《Optics Letters》 |2021年第3期|共4页
  • 作者单位

    Univ Sci &

    Technol China Dept Precis Machinery &

    Precis Instrumentat Hefei 230027 Peoples R China;

    Univ Sci &

    Technol China Dept Precis Machinery &

    Precis Instrumentat Hefei 230027 Peoples R China;

    Univ Sci &

    Technol China Dept Precis Machinery &

    Precis Instrumentat Hefei 230027 Peoples R China;

    Univ Sci &

    Technol China Dept Precis Machinery &

    Precis Instrumentat Hefei 230027 Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 计量学;光学;
  • 关键词

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