Near-UV optical-cavities n Ga2O3 nanowires

Alonso-Orts Manuel; Chilla Gerwin; Hoetzel Rudolfo; Nogales Emilio; San Juan Jose M.; No Maria L.; Eickhoff Martin; Mendez Bianchi

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Near-UV optical-cavities n Ga2O3 nanowires

机译：近UV光学空腔N Ga2O3纳米线

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In this Letter, we report optical confinement in the near-ultraviolet (near-UV) range in Ga2O3 nanowires (NWs) by distributed Bragg reflector (DBR) nanopatterned cavities. High-contrast DBRs, which act as the end mirrors of the cavities of the desired length, are designed and fabricated by focused ion beam etching. The resonant modes of the cavities are analyzed by micro-photoluminescence measurements, analytical models, and simulations, which show very good agreement between each other. Experimental reflectivities up to 50% are obtained over the 350-410 nm region for the resonances in this wavelength range. Therefore, Ga2O3 NW optical cavities are shown as good candidates for single-material-based near-UV light emitters. (C) 2021 Optical Society of America

机译：在这封信中，我们报道了通过分布布拉格反射镜（DBR）纳米图形腔在Ga2O3纳米线（NWs）中进行近紫外（近紫外）范围的光学约束。高对比度DBR作为所需长度腔体的端镜，通过聚焦离子束蚀刻进行设计和制造。通过微光致发光测量、分析模型和模拟分析了谐振腔的谐振模式，结果表明两者之间有很好的一致性。在350-410nm范围内，对于该波长范围内的共振，可获得高达50%的实验反射率。因此，Ga2O3 NW光学腔被证明是基于单一材料的近紫外光发射器的良好候选材料。（2021）美国光学学会

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来源
《Optics Letters》 |2021年第2期|共4页
作者
Alonso-Orts Manuel; Chilla Gerwin; Hoetzel Rudolfo; Nogales Emilio; San Juan Jose M.; No Maria L.; Eickhoff Martin; Mendez Bianchi;
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Univ Complutense Madrid Dept Fis Mat Plaza Ciencias 1 E-28040 Madrid Spain;

Univ Bremen Inst Solid State Phys Otto Hahn Allee 1 D-28359 Bremen Germany;

Univ Bremen Inst Solid State Phys Otto Hahn Allee 1 D-28359 Bremen Germany;

Univ Complutense Madrid Dept Fis Mat Plaza Ciencias 1 E-28040 Madrid Spain;

Univ Basque Country Dept Fis Mat Condensada Fac Ciencias &

Tecnol Apdo 644 E-48080 Bilbao Spain;

Univ Basque Country Dept Fis Aplicada 2 Fac Ciencias &

Tecnol Apdo 644 E-48080 Bilbao Spain;

Univ Bremen Inst Solid State Phys Otto Hahn Allee 1 D-28359 Bremen Germany;

Univ Complutense Madrid Dept Fis Mat Plaza Ciencias 1 E-28040 Madrid Spain;

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正文语种 eng
中图分类计量学;光学;
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2. Synthesis of large-scale GaN nanowires by ammoniating Ga2O3 films on Co layer deposited on Si（111） substrates [J] . 秦丽霞, 薛成山, 庄惠照, 中国物理：英文版 . 2008,第006期
3. Synthesis of large-scale GaN nanowires by ammoniating Ga2O3 films on Co layer deposited on Si(111) substrates [J] . Qin Li-Xia, Xue Cheng-Shan, Zhuang Hui-Zhao, 中国物理：英文版 . 2008,第006期
4. p-CuO nanowire-ZnO nanosheet heterojunction-based near-UV sensor fabricated by electroplating and thermal oxidation process [J] . Wang Xiaochen, Cho Hyoung J. Materials Letters . 2018,第jula15期

机译：通过电镀和热氧化工艺制造的基于p-CuO纳米线/ n-ZnO纳米片异质结的近紫外传感器
5. Enhanced near-UV emission from self-catalytic brush-like GaN nanowires [J] . Soohyun Kim, Sunghoon Park, Hyunsung Ko, Materials Letters . 2014,第feba1期

机译：自催化刷状GaN纳米线增强了近紫外发射
6. Ordered Nanowire Array Blue/Near-UV Light Emitting Diodes [J] . Sheng Xu, Chen Xu, Ying Liu, Advanced Materials . 2010,第42期

机译：订购的纳米线阵列蓝色/近紫外发光二极管
7. Electrodeposited ZnO nanowire-based light-emitting diodes with tunable emission from near-UV to blue [C] . Thierry Pauporte, Oleg Lupan, Bruno Viana Oxide-based materials and devices IV . 2013

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8. Thermally Grown Ga2O3 Thin Films and Nanowires and Their Device Applications [D] . Mao, Howard. 2019

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机译：sn掺杂Ga2O3纳米线的不均匀性的阴极发光研究

Near-UV optical-cavities n Ga2O3 nanowires

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