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Investigation of InGaN-based red/green micro-light-emitting diodes

机译:InGaN基红色/绿色微发光二极管的研究

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摘要

We investigated the performance of InGaN-based red/green micro-light-emitting diodes (mu LEDs) ranging from 98 x 98 mu m(2) to 17 x 17 mu m(2). The average forward voltage at 10 A/cm(2) was independent of the dimension of mu LEDs. Red mu LEDs exhibited a larger blueshift of the peak wavelength (similar to 35 nm) and broader full-width at half maximum (>= 50 nm) at 2-50 A/cm(2) compared to green mu LEDs. We demonstrated that 47 x 47 mu m(2) red mu LEDs had an on-wafer external quantum efficiency of 0.36% at the peak wavelength of 626 nm, close to the red primary color defined in the recommendation 2020 standard. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
机译:我们研究了InGaN基红绿微发光二极管(mu-LED)的性能,其范围从98×98μm(2)到17×17μm(2)。10 A/cm(2)下的平均正向电压与mu LED的尺寸无关。与绿色mu LED相比,红色mu LED在2-50 a/cm(2)下的峰值波长(类似于35 nm)有更大的蓝移,在半最大值(>=50 nm)处的全宽更宽。我们证明,47 x 47μm(2)红色mu LED在峰值波长626 nm处的晶片外量子效率为0.36%,接近2020年推荐标准中定义的红色原色。(c)OSA开放获取出版协议条款下的美国2021光学学会

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  • 来源
    《Optics Letters》 |2021年第8期|共4页
  • 作者单位

    King Abdullah Univ Sci &

    Tedmolo KAUST Comp Elect &

    Math Sci &

    Engn CEMSE Div Thuwal 239556900 Saudi Arabia;

    King Abdullah Univ Sci &

    Tedmolo KAUST Comp Elect &

    Math Sci &

    Engn CEMSE Div Thuwal 239556900 Saudi Arabia;

    King Abdullah Univ Sci &

    Tedmolo KAUST Comp Elect &

    Math Sci &

    Engn CEMSE Div Thuwal 239556900 Saudi Arabia;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 计量学;光学;
  • 关键词

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