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首页> 外文期刊>Physica, B. Condensed Matter >Enhancement of dielectric performance in BaZr0.02(Fe0.5Nb(0.5))(0.98)O-3 ceramics influenced by sintering temperatures
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Enhancement of dielectric performance in BaZr0.02(Fe0.5Nb(0.5))(0.98)O-3 ceramics influenced by sintering temperatures

机译：增强BaZr0.02中的介电性能（Fe0.5nb（0.5））（0.98）O-3受烧结温度影响的陶瓷

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摘要

To obtain giant dielectric constant, the result of sintering progression on the electrical property of BaZr0.02(Fe0.5Nb0.5)(0.98)O-3 (BZFN) ceramics were explored. All sintered BZFN samples show single phase compound. The surface morphology was tuned by modifying the sintering temperature which acting significant job for getting the high dielectric constant. After the optimization of sintering temperature, we achieved giant dielectric constant (similar to 58653) for 1225 degrees C sintered sample with low dielectric loss (similar to 0.32). Zr doping suppresses the semiconducting behaviour which is assured by the reducing of dielectric loss. EDX analysis confirm the reoxidation reaction occur at grain boundaries. Impedance spectroscopy experiment has been performed to detect the signature of electrical heterogeneities inside the materials. At high and low frequency range two dielectric relaxations were detected which follows the Arrhenius equation.
机译：为了获得巨介电常数，研究了烧结过程对BaZr0电性能的影响。探索了02（Fe0.5Nb0.5）（0.98）O-3（BZFN）陶瓷。所有烧结BZFN样品均显示单相化合物。通过改变烧结温度来调节表面形貌，这对获得高介电常数起着重要作用。在优化烧结温度后，我们在1225℃烧结样品中获得了巨介电常数（类似于58653），且介电损耗较低（类似于0.32）。Zr掺杂抑制了半导体行为，这是通过降低介电损耗来保证的。EDX分析证实再氧化反应发生在晶界。阻抗谱实验已用于检测材料内部电不均匀性的特征。在高频和低频范围内，检测到两种介电弛豫，符合阿累尼乌斯方程。

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