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Modulation of thermoelectric properties of thermally evaporated copper nitride thin films by optimizing the growth parameters

机译:通过优化生长参数来调制热蒸发氮化物薄膜的热电性能

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In this paper, we have successfully controlled the thermoelectric properties of copper nitride (Cu3N) thin films by optimizing the post growth nitrogen gas flow time. During thermal evaporation growth of Cu3N thin films, pure copper power (0.12 g) was evaporated on soda lime glass substrate. The boat temperature and nitrogen gas flow rate were fixed at 1010 degrees C and 100 sccm respectively in horizontal glass tube furnace. In order to study the annealing time duration, all samples were annealed at 320 degrees C in tube furnace for 2-8 h with constant flow rate of 100 sccm. The formation of Cu3N phase was confirmed by X-Ray Diffraction (XRD) and it was found that crystallinity of grown thin films was improved with annealing time duration. The Seebeck data demonstrated that the value of Seebeck coefficient was increased form 87.59 mu V/degrees C to 134.79 mu V/degrees C as the annealing time duration was increased from 2 to 8 h. This improvement in Seebeck coefficient was associated with the enhancement of samples crystallinity which ultimately increase the mobility of charge carriers. The value of electrical conductivity was also increased from 26.04 S/cm to 33.49 S/cm, therefore we were able to achieve the highest value of power factor (6.08 x 10(-5) Wm(-1) C-2) for sample annealed for maximum time duration. Raman spectroscopy and SEM measurements were additionally performed to strengthen our proposed argument.
机译:本文通过优化生长后的氮气流动时间,成功地控制了氮化铜(Cu3N)薄膜的热电性能。在Cu3N薄膜的热蒸发生长过程中,纯铜粉末(0.12g)在钠钙玻璃衬底上蒸发。在卧式玻璃管炉中,舟温和氮气流量分别固定在1010℃和100 sccm。为了研究退火时间,所有样品在320℃的管式炉中以100 sccm的恒定流速退火2-8小时。X射线衍射(XRD)证实了Cu3N相的形成,发现薄膜的结晶度随退火时间的延长而提高。Seebeck数据表明,随着退火时间从2小时增加到8小时,Seebeck系数的值从87.59μV/摄氏度增加到134.79μV/摄氏度。Seebeck系数的提高与样品结晶度的增强有关,这最终增加了电荷载流子的迁移率。电导率值也从26.04 S/cm增加到33.49 S/cm,因此我们能够在最大时间内退火样品,获得最高的功率因数(6.08 x 10(-5)Wm(-1)C-2)。此外,还进行了拉曼光谱和扫描电镜测量,以加强我们提出的论点。

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