...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Dalton transactions: An international journal of inorganic chemistry >About the importance of purge time in molecular layer deposition of alucone films dagger
【24h】

About the importance of purge time in molecular layer deposition of alucone films dagger

机译：关于铝膜孔分子层沉积中吹扫时间的重要性

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The deposition rate and properties of MLD films are for a large part determined by what happens during the reactant exposure step. In some cases, however, the purge step is of equal importance, for example in MLD of alucone using trimethylaluminum (TMA) and ethylene glycol (EG). We show that infiltration of TMA into the alucone film followed by its continuous outgassing during the subsequent EG exposure step can lead to undesired CVD effects. To avoid the CVD effects, very long TMA purge times are required which in turn significantly impact the obtainable deposition rates. We also developed a kinetic model that correlates process parameters like reactant partial pressures, exposure times, purge time and deposition temperature to the CVD component in the film growth. We observed that the overall GPC decreases exponentially with TMA purge time attributed to the decreasing CVD component and after a long enough purge time reaches a steady-state value of growth only due to the MLD component. It was also observed that the CVD contributions reduced with decreasing partial pressure of TMA and increasing deposition temperature. With an intention to improve the outgassing efficiency of TMA, the influence of purge gas flow on the CVD growth component is also briefly discussed. Moreover, to mitigate the problem of infiltration, we show that a bulkier substitute of TMA like dimethylaluminum isopropoxide (DMAI) shows no infiltration and can improve the alucone deposition rate by at least an order of magnitude.
机译：MLD薄膜的沉积速率和性能在很大程度上取决于反应物暴露步骤中发生的情况。然而，在某些情况下，吹扫步骤同样重要，例如在使用三甲基铝（TMA）和乙二醇（EG）的铝锥MLD中。我们发现，TMA渗透到alucone膜中，然后在随后的EG曝光步骤中持续放气，可能会导致不希望的CVD效应。为了避免CVD效应，需要很长的TMA吹扫时间，这反过来会显著影响可获得的沉积速率。我们还开发了一个动力学模型，将反应物分压、曝光时间、清洗时间和沉积温度等工艺参数与薄膜生长中的CVD成分相关联。我们观察到，由于CVD成分的减少，总GPC随着TMA吹扫时间呈指数下降，并且在足够长的吹扫时间后，仅由于MLD成分，达到稳态增长值。还观察到，随着TMA分压的降低和沉积温度的升高，CVD贡献降低。为了提高TMA的排气效率，还简要讨论了吹扫气流对CVD生长组分的影响。此外，为了缓解渗透问题，我们证明了一种体积更大的TMA替代品，如二甲基异丙醇铝（DMAI），没有渗透，并且可以将alucone沉积速率提高至少一个数量级。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号