Effects of threshold voltage variability on the characteristics of high sensitivity metal-oxide-semiconductor dosimeters.

Sarrabayrouse G; Siskos S; Boukabache A

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Effects of threshold voltage variability on the characteristics of high sensitivity metal-oxide-semiconductor dosimeters.

机译：阈值电压可变性对高灵敏度金属氧化物半导体剂量计特性的影响。

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摘要

The consequence of the variability of the threshold voltage of high sensitivity metal-oxide-semiconductor (MOS) dosimeters on the accuracy of the measured dose is presented.

机译：提出了高灵敏度金属氧化物半导体（MOS）剂量计的阈值电压变化对所测剂量准确性的影响。

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《Applied radiation and isotopes: including data, instrumentation and methods for use in agriculture, industry and medicine》 |2005年第6期|共3页
作者
Sarrabayrouse G; Siskos S; Boukabache A;
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正文语种 eng
中图分类特种医学;
关键词
V (voltage); Oxides; Metals; Myelofibrosis; 氧化物; 金属; 骨髓纤维化;

机译：V (voltage);Oxides;Metals;Myelofibrosis;氧化物;金属;骨髓纤维化;

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1. Effects of threshold voltage variability on the characteristics of high sensitivity metal-oxide-semiconductor dosimeters. [J] . Sarrabayrouse G, Siskos S, Boukabache A Applied radiation and isotopes: including data, instrumentation and methods for use in agriculture, industry and medicine . 2005,第5a6期

机译：阈值电压可变性对高灵敏度金属氧化物半导体剂量计特性的影响。
2. Effects of random number and location of the nanosized metal grains on the threshold voltage variability of silicon gate-all-around nanowire n-type metal-oxide-semiconductor field-effect transistors [J] . Wen-Li Sung, Yiming Li Journal of Computational Electronics . 2020,第4期

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3. Comprehensive Modeling of Threshold Voltage Variability Induced by Plasma Damage in Advanced Metal-Oxide-Semiconductor Field-Effect Transistors [J] . Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Japanese journal of applied physics . 2010,第4issue2期

机译：先进金属氧化物半导体场效应晶体管中等离子体损伤引起的阈值电压变化的综合建模
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5. Strain effects on silicon CMOS transistors: Threshold voltage, gate tunneling current, and 1/f noise characteristics. [D] . Lim, Ji-Song. 2007

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6. P113-M Voltage/Current Divider Effects on Nanoelectrospray Threshold Voltage and Electrospray Stability [O] . G. A. Valaskovic, A. W. Perala, C. J. Toher 2007

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Effects of threshold voltage variability on the characteristics of high sensitivity metal-oxide-semiconductor dosimeters.

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