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首页> 外文期刊>Boletin de la Sociedad Espanola de Ceramica y Vidrio >Study of the incorporation of the Er and Nd Ions in Gallium Antimonide grown by the Bridgman method
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Study of the incorporation of the Er and Nd Ions in Gallium Antimonide grown by the Bridgman method

机译：Bridgman法在锑化镓中掺入Er和Nd离子的研究

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摘要

In this work the study of CaSb crystals grown by the Bridgman method doped with Er and Nd with different concentrations has been carried out. Atomic absorption analysis have been developed for obtaining the effective segregation coefficient of the two dopants along the growth direction of the material. The resistivity, mobility and density of carriers were obtained by the van der Pauw technique for the different dopant concentrations. The energy dispersive X ray analysis (EDX) and the scanning electron microscope (SEM) have demonstrated the presence of precipitates made from Sb and rare earth elements for the highest concentrations. Cathodoluminescence (CL) analysis have proved that the rare earth elements have a reduction effect of native defects in GaSb.
机译：在这项工作中，已经研究了通过掺有不同浓度的Er和Nd的Bridgman方法生长的CaSb晶体。已经开发了原子吸收分析来获得沿着材料的生长方向的两种掺杂剂的有效偏析系数。通过van der Pauw技术获得了不同掺杂浓度的载流子的电阻率，迁移率和密度。能量色散X射线分析（EDX）和扫描电子显微镜（SEM）已证明存在由最高浓度的Sb和稀土元素制成的沉淀物。阴极发光（CL）分析已证明稀土元素具有减少GaSb中天然缺陷的作用。

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