Structural characterisation of SiO_2 based multilayers using spectroscopic ellipsometry

M. GARRIGA; M. I. ALONSO

首页> 外文期刊>Boletin de la Sociedad Espanola de Ceramica y Vidrio >Structural characterisation of SiO_2 based multilayers using spectroscopic ellipsometry

【24h】

Structural characterisation of SiO_2 based multilayers using spectroscopic ellipsometry

机译：椭圆偏振光谱法表征SiO_2基多层膜的结构

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

We have characterised PECVD-grown nonstoichiometric silicon oxides (SiO_x) and thick waveguide structures based on these materials with spectroscopic ellipsometry. We have developed a fit method that allows detailed analysis of complicated ellipsometric spectra, such as those of thick (approx 10 #mu#m) multilayer structures found in modern integrated optics devices. Ellipsometry should be the natural choice for thorough nondestructive characterisation of those heterostructures, but extraction of the required parameters is often impracticable by common approaches. Our fit procedure is based in spline parametrisations of the unknown optical functions and is applicable to materials either with a smooth optical response or displaying sharp electronic transitions in the analysed energy range.

机译：我们已经用光谱椭圆偏振法表征了PECVD生长的非化学计量的氧化硅（SiO_x）和基于这些材料的厚波导结构。我们已经开发出一种拟合方法，可以对复杂的椭圆光谱进行详细分析，例如在现代集成光学设备中发现的厚（约10＃μm）多层结构。椭圆光度法应该是对那些异质结构进行全面无损表征的自然选择，但通常的方法通常无法提取所需的参数。我们的拟合程序基于未知光学功能的样条参数设置，适用于在分析的能量范围内具有平滑光学响应或显示出清晰电子跃迁的材料。

著录项

来源
《Boletin de la Sociedad Espanola de Ceramica y Vidrio》 |2000年第6期|共6页
作者
M. GARRIGA; M. I. ALONSO;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 spa
中图分类硅酸盐工业;
关键词
ellipsometry; numerical simulation; optical properties; thick layers; silicon suhoxides;

机译：椭圆偏光法;数值模拟;光学性能;厚层;硅氧化硅;

相似文献

外文文献
中文文献
专利

1. Structural characterisation of SiO_2 based multilayers using spectroscopic ellipsometry [J] . M. GARRIGA, M. I. ALONSO Boletin de la Sociedad Espanola de Ceramica y Vidrio . 2000,第6期

机译：椭圆偏振光谱法表征SiO_2基多层膜的结构
2. Optical constants of SiO_2 from 196 to 1688nm (0.735–6.33 eV) from 20, 40, and 60nm films of reactively sputtered SiO_2 on Eagle XG~? glass by spectroscopic ellipsometry [J] . Brian I. Johnson, Cody V. Cushman, Joseph Rowley, Surface science spectra . 2017,第期

机译：从196到1688nm（0.735-6.33ev）的SiO_2光学常数从20,40和60nm的反应溅射SiO_2上的Eagle XG〜？玻璃通过光谱椭圆形测定法
3. Complete optical characterization of the SiO_2/Si system by spectroscopic ellipsometry, spectroscopic reflectometry and atomic force microscopy [J] . Ohlidal I., Pincik E., Ohlidal M., Surface and Interface Analysis: SIA: An International Journal Devoted to the Development and Application of Techniques for the Analysis of Surfaces, Interfaces and Thin Films . 1999,第1期

机译：通过光谱椭偏仪，光谱反射仪和原子力显微镜对SiO_2 / Si系统进行完整的光学表征
4. Spectroscopic Ellipsometry for Anisotropic Nano-Layered Al/SiO_2 Metamaterial with Hyperbolic Dispersion [C] . Priscilla Kelly, Andrew C. Martin, Lyuba Kuznetsova Nanophotonic materials XIII . 2016

机译：椭圆双折射各向异性纳米Al / SiO_2超材料的光谱椭圆仪
5. Spectroscopic ellipsometry characterization of single and multilayer aluminum nitride/indium nitride thin film systems [D] . Khoshman, Jebreel M. 2005

机译：单层氮化铝/氮化铟薄膜系统的光谱椭型椭圆形表征
6. Investigating organic multilayers by spectroscopic ellipsometry: specific and non-specific interactions of polyhistidine with NTA self-assembled monolayers [O] . Ilaria Solano, Pietro Parisse, Ornella Cavalleri, 2016

机译：通过光谱椭偏法研究有机多层：聚组氨酸与NTA自组装单层的特异性和非特异性相互作用
7. Structural characterisation of SiO2 based multilayers using spectroscopic ellipsometry [O] . Alonso, M. I., Garriga, M. 2000

机译：椭圆偏振光谱法表征SiO2基多层膜
8. Spectroscopic Ellipsometry Characterisation of CVD Deposition and Doping Of Polysilicon Multilayer Structures [R] . Sharma, S., Pickering, C., Morpeth, A., 1988

机译：多晶硅多层结构CVD沉积和掺杂的光谱椭偏法表征

Structural characterisation of SiO_2 based multilayers using spectroscopic ellipsometry

摘要

著录项

相似文献

相关主题

期刊订阅