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首页> 外文期刊>Applied optics >High-contrast images of semiconductor sites via one-photon optical beam-induced current imaging and confocal reflectance microscopy
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High-contrast images of semiconductor sites via one-photon optical beam-induced current imaging and confocal reflectance microscopy

机译：通过单光子光束感应电流成像和共聚焦反射显微镜对半导体部位进行高对比度成像

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摘要

We demonstrate a computationally efficient procedure for determining only the semiconductor sites in a confocal reflectance image of an integrated circuit. It utilizes a one-photon optical beam-induced current (1P-OBIC) and confocal reflectance images that are generated from the same focused excitation beam. A 1P-OBIC image is a two-dimensional map of the currents induced by the beam as it is scanned across the circuit surface. A 1P-OBIC is produced by an illuminated semiconductor material if the excitation photon energy exceeds the bandgap. The 1P-OBIC image has no vertical resolution because the 1P-OBIC is linear with the excitation beam intensity. The exclusive high-contrast image of semiconductor sites is generated by the product of the 1P-OBIC image and the confocal image. High-contrast images of the metal sites are also obtained by the product of the complementary OBIC image and the same confocal image.
机译：我们演示了一种计算有效的过程，该过程仅用于确定集成电路的共焦反射率图像中的半导体位置。它利用了单光子光束感应电流（1P-OBIC）和从同一聚焦激发光束产生的共焦反射率图像。 1P-OBIC图像是光束在电路表面上扫描时所感应的电流的二维图。如果激发光子能量超过带隙，则由照明的半导体材料产生1P-OBIC。 1P-OBIC图像没有垂直分辨率，因为1P-OBIC与激发光束强度呈线性关系。半导体部位的独家高对比度图像是由1P-OBIC图像和共焦图像的乘积生成的。金属位的高对比度图像也可以通过互补OBIC图像和同一共焦图像的乘积获得。

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