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Crystallization behavior of Ge-doped eutectic Sb_(70)Te_(30) films in optical disks

机译：掺Ge的Sb_（70）Te_（30）共晶薄膜在光盘中的结晶行为

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摘要

We report laser-induced crystallization behavior of binary Sb-Te and ternary Ge-doped eutectic Sb_(70)Te_(30) thin film samples in a typical quadrilayer stack as used in phase-change optical disk data storage. Several experiments have been conducted on a two-laser static tester in which one laser operating in pulse mode writes crystalline marks on amorphous film or amorphous marks on crystalline film, while the second laser operating at low-power cw mode simultaneously monitors the progress of the crystalline or amorphous mark formation in real time in terms of the reflectivity variation. The results of this study show that the crystallization kinetics of this class of film is strongly growth dominant, which is significantly different from the crystallization kinetics of stochiometric Ge-Sb-Te compositions. In Sb-Te and Ge-doped eutectic Sb_(70)Te_(30) thin-film samples, the crystallization behavior of the two forms of amorphous states, namely, as-deposited amorphous state and melt-quenched amorphous state, remains approximately same. We have also presented experiments showing the effect of the variation of the Sb/Te ratio and Ge doping on the crystallization behavior of these films.
机译：我们报告了在相变光盘数据存储中使用的典型四层堆栈中二进制Sb-Te和掺Ge的三元共晶Sb_（70）Te_（30）薄膜样品的激光诱导结晶行为。在两激光静态测试仪上进行了一些实验，其中一个以脉冲模式运行的激光器在非晶膜上写入晶体标记，或者在晶体膜上写入非晶标记，而以低功率cw模式运行的第二个激光器同时监视晶体的进度。就反射率变化而言，可实时形成结晶或无定形标记。这项研究的结果表明，这类薄膜的结晶动力学具有很强的生长支配性，这与化学计量的Ge-Sb-Te成分的结晶动力学有显着差异。在Sb-Te和Ge掺杂的Sb_（70）Te_（30）共晶薄膜样品中，两种形式的非晶态（即沉积态非晶态和熔融淬火非晶态）的结晶行为保持大致相同。 。我们还提出了实验，表明Sb / Te比和Ge掺杂的变化对这些薄膜的结晶行为的影响。

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