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Photosensitive GeO_(2)-SiO_(2) films for ultraviolet laser writing of channel waveguides and Bragg gratings with Cr-loaded waveguide structure

机译:GeO_(2)-SiO_(2)感光膜,用于Cr加载波导结构的沟道波导和布拉格光栅的紫外激光写入

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摘要

Irradiation with intense ultraviolet laser pulses induced a large refractive-index change in 30GeO_(2)-70SiO_(2) waveguide-grade thin films prepared by the plasma-enhanced chemical vapor deposition method, which contained a large amount of photoactive Ge~(2+) defects. The maximum index change in the as-deposited films by KrF and XeF excimer laser irradiation was estimated to be 1.2×10~(-3) and 0.28×10~(-3), respectively. These results clearly indicate that the photorefractivity of GeO_(2)-SiO_(2) glasses is due to a Ge~(2+) defect in origin. The channel waveguide and the planar Bragg gratings were directly written in the photoactive Ge~(2+)-enriched GeO_(2)-SiO_(2) thin films by pulsed ultraviolet laser irradiation with a Cr-metal-loaded-type waveguide structure.
机译:强烈的紫外激光脉冲辐射在通过等离子增强化学气相沉积法制备的30GeO_(2)-70SiO_(2)波导级薄膜中引起了较大的折射率变化,该薄膜中含有大量的光敏Ge〜(2 +)缺陷。通过KrF和XeF准分子激光辐照沉积薄膜的最大折射率变化估计分别为1.2×10〜(-3)和0.28×10〜(-3)。这些结果清楚地表明,GeO_(2)-SiO_(2)玻璃的光折光性归因于原始的Ge〜(2+)缺陷。通过Cr-金属负载型波导结构的脉冲紫外激光辐照,将通道波导和平面布拉格光栅直接写入富光Ge_(2+)的GeO_(2)-SiO_(2)薄膜中。

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    《Applied optics》 |2003年第22期|共5页
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  • 正文语种 eng
  • 中图分类 光学;
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