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首页> 外文期刊>Applied optics >TECHNIQUE FOR MAPPING THE SPECTRAL UNIFORMITY OF LUMINESCENT SEMICONDUCTING MATERIAL
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TECHNIQUE FOR MAPPING THE SPECTRAL UNIFORMITY OF LUMINESCENT SEMICONDUCTING MATERIAL

机译：映射发光半导体材料的光谱均匀性的技术

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摘要

A technique to map the spectral uniformity of luminescent semiconducting materials at room temperature is described. This technique is based on spatially resolved and polarization-resolved measurements of the photoluminescence and requires a polarizing beam splitter with a splitting ratio that has a linear dependence on wavelength. Measurements on a quantum-well sample that was patterned by intermixing with a focused ion beam are used to demonstrate the technique. With a spectral resolution of better than 1 nm and a spatial resolution of similar or equal to 1 mu m, as well as the ability to map concurrently the strain field through the measurement of the degree of polarization of the photoluminescence and the photoluminescence yield, this technique provides a simple, nondestructive method of assessing luminescent materials. [References: 9]
机译：描述了一种在室温下映射发光半导体材料的光谱均匀性的技术。该技术基于光致发光的空间分辨和偏振分辨测量，并且需要一种偏振分束器，其分束比对波长具有线性依赖性。通过与聚焦离子束混合而图案化的量子阱样品上的测量值用于证明该技术。具有优于1 nm的光谱分辨率和类似或等于1μm的空间分辨率，以及通过测量光致发光的偏振度和光致发光产量同时绘制应变场的能力，技术提供了一种评估发光材料的简单，无损的方法。 [参考：9]

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