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Nonlinearity measurements of silicon photodetectors

机译:硅光电探测器的非线性测量

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Nonlinearities of the responsivity of various types of silicon photodetectors have been studied. These detectors are based on photodiodes with two sizes of the active area (10 x 10 mm(2) and 18 x 18 mm(2)). The detector configurations investigated include single photodiodes, two reflection trap detectors, and a transmission trap detector. For all devices, the measured nonlinearity was less than 2 x 10(-4) for photocurrents up to 200 mu A. The diameter of the measurement beam was found to have an effect on the nonlinearity. The measured nonlinearity of the trap detectors depends on the polarization state of the incident beam. The responsivity of the photodetectors consisting of the large-area photodiodes reached saturation at higher photocurrent values compared with the devices based on the photodiodes with smaller active area. (C) 1998 Optical Society of America. [References: 18]
机译:已经研究了各种类型的硅光电探测器的响应度的非线性。这些检测器基于具有两个大小的有效区域的光电二极管(10 x 10 mm(2)和18 x 18 mm(2))。研究的检测器配置包括单个光电二极管,两个反射陷阱检测器和一个透射陷阱检测器。对于所有器件,对于高达200μA的光电流,所测量的非线性度均小于2 x 10(-4)。发现测量光束的直径对非线性度有影响。陷阱检测器的测量非线性取决于入射光束的偏振态。与基于具有较小有效面积的光电二极管的器件相比,由大面积光电二极管组成的光电探测器的响应率在较高的光电流值下达到饱和。 (C)1998年美国眼镜学会。 [参考:18]

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