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首页> 外文期刊>Applied optics >Emission characteristics of photoconductive antennas based on low-temperature-grown GaAs and semi-insulating GaAs
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Emission characteristics of photoconductive antennas based on low-temperature-grown GaAs and semi-insulating GaAs

机译：基于低温生长的砷化镓和半绝缘砷化镓的光电导天线的发射特性

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Terahertz radiation was generated with several designs of photoconductive antennas (three dipoles, a bow tie, and a coplanar strip Line) fabricated on low-temperature-grown (LT) GaAs and semi-insulating (SI) GaAs, and the emission properties of the photoconductive antennas were compared with each other. The radiation spectrum of each antenna was characterized with the photoconductive sampling technique. The total radiation power was also measured by a bolometer for comparison of the relative radiation power. The radiation spectra of the LT-GaAs-based and SI-GaAs-based photoconductive antennas of the same design showed no significant difference. The pump-power dependencies of the radiation power showed saturation for higher pump intensities, which was more serious in SI-GaAs-based antennas than in LT-GaAs-based antennas. We attributed the origin of the saturation to the held screening of the photocarriers. (C) 1997 Optical Society of America.
机译：太赫兹辐射是由在低温生长（LT）GaAs和半绝缘（SI）GaAs上制造的几种光电导天线设计（三个偶极子，领结和共面带状线）产生的，并且比较了光电导天线。用光电导采样技术对每个天线的辐射谱进行了表征。还通过辐射热测量仪测量了总辐射功率，以比较相对辐射功率。相同设计的基于LT-GaAs的光导天线和基于SI-GaAs的光导天线的辐射光谱没有显着差异。辐射功率对泵浦功率的依赖性表现出较高泵浦强度的饱和度，这在基于SI-GaAs的天线中比在基于LT-GaAs的天线中更为严重。我们将饱和度的起因归因于对光电载体的筛选。 （C）1997年美国眼镜学会。

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