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Displacement measurement that uses transient photoelectromotive force effects in CdTe:V with frequency-modulated lasers

机译:在调频激光器中使用CdTe:V中的瞬态光电动势效应进行位移测量

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摘要

A new method of displacement measurement that uses the transient photoelectromotive force effects that arise in semiconductors illuminated by two frequency-modulated lasers is proposed and demonstrated experimentally. A height resolution of 0.85 μm was achieved experimentally; theoretical analysis charts the path toward eventual improvement of this resolution.
机译:提出了一种新的位移测量方法,该方法利用了由两个调频激光器照射的半导体中产生的瞬态光电动势效应,并进行了实验验证。实验获得的高度分辨率为0.85μm;理论分析说明了最终提高此分辨率的途径。

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