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Terahertz-wave antireflection coating on Ge and GaAs with fused quartz

机译:Ge和GaAs熔融石英上的太赫兹波抗反射涂层

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In the terahertz-wave region, fabrication of an antireflection (AR) coating is difficult because it must be as thick as several tens of micrometers, which is far thicker than that used in the optical region. We discuss a lapping method for fabricating an AR layer with a desired thickness for terahertz-wave optical devices. To demonstrate this method, we glued a thin fused-quartz plate to a surface of an undoped Ge or GaAs wafer and polished it to a thickness of one-quarter wavelength. This reduced the reflectivity of the AR surface to 1/720 of the reflection of an uncoated surface, as expected from optical theory. (C) 1998 Optical Society of America. [References: 12]
机译:在太赫兹波区域,制造抗反射(AR)涂层很困难,因为它必须厚达几十微米,比光学区域中使用的厚度要厚得多。我们讨论了用于制造具有太赫兹波光学器件的期望厚度的AR层的研磨方法。为了演示该方法,我们将一块熔融石英薄板粘贴到未掺杂的Ge或GaAs晶片的表面上,并将其抛光到四分之一波长的厚度。如光学理论所期望的,这将AR表面的反射率降低到未镀膜表面的反射的1/720。 (C)1998年美国眼镜学会。 [参考:12]

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