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首页> 外文期刊>Australian Journal of Chemistry: A Journal for the Publication of Original Research in All Branches of Chemistry >Organometallic Gold(I) Acetylide/Polyoxometalate Hybrid Langmuir-Blodgett Films: Preparation, Characterization, and Photoelectric Properties
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Organometallic Gold(I) Acetylide/Polyoxometalate Hybrid Langmuir-Blodgett Films: Preparation, Characterization, and Photoelectric Properties

机译：有机金属金（I）乙酰化物/多金属氧酸盐混合Langmuir-Blodgett膜：制备，表征和光电性能

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摘要

A new series of organometallic/inorganic hybrid Langmuir-Blodgett (LB) films containing an organometallic gold(I) aryleneethynylene metal complex (OMA) as the π-conjugated organometallic molecule and a polyoxometalate (POM, POM = H3BW_(12)O_(40), H6AS2W_(18)O_(62), or H6P2Mo_(18)O_(62)) of the Keggin and Dawson structure as the inorganic composite, were prepared and characterized by π-A isotherms, UV-vis absorption spectra, photoluminescence spectra, atomic force microscopy imaging, scanning tunnelling microscopy, and surface photovoltage spectroscopy. Our experimental results indicate that stable, well defined and well organized Langmuir and LB films are formed in pure water and polyoxometalate subphases. There is a quenching effect in the luminescence of the gold(I) complex when it is made into the LB films. The OMA/POM hybrid LB films display strong photovoltage effect in the UV-vis region. The photovoltage response of OMA/H6AS2W_(18)O_(62) can be as high as 3338 μV. OMA/POM monolayer films show good electrical conductivity, and the tunnelling current for a OMA/H3BW_(12)O_(40) monolayer film amounts to 50 to approximately -100 nA when the voltage is set at ±9 V
机译：一系列新的有机金属/无机朗格缪尔-布洛杰特（LB）薄膜，包含有机金属金（I）亚芳基乙炔金属络合物（OMA）作为π共轭有机金属分子和多金属氧酸盐（POM，POM = H3BW_（12）O_（40 ），制备了Keggin和Dawson结构的H6AS2W_（18）O_（62）或H6P2Mo_（18）O_（62））作为无机复合材料，并通过π-A等温线，UV-vis吸收光谱，光致发光光谱进行了表征，原子力显微镜成像，扫描隧道显微镜和表面光电压光谱。我们的实验结果表明，在纯水和多金属氧酸盐亚相中形成了稳定，轮廓分明且组织良好的Langmuir和LB膜。将金（I）配合物制成LB膜时，其发光具有猝灭作用。 OMA / POM混合LB膜在UV-vis区域显示出强大的光电压效应。 OMA / H6AS2W_（18）O_（62）的光电压响应可以高达3338μV。 OMA / POM单层膜显示出良好的导电性，并且当电压设置为±9 V时，OMA / H3BW_（12）O_（40）单层膜的隧穿电流总计为50至大约-100 nA。

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