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Detection wavelengths and photocurrents of very long wavelength quantum-well infrared photodetectors

机译：超长波长量子阱红外光电探测器的检测波长和光电流

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Based on detailed studies of the energy band structure and the optical transitions in very long wavelength (> 14 pm) GaAs/AlGaAs quantum-well (QW) infrared photodetectors (QWIPs), we have built a practical QWIP model. We study the factors that determine photogenerated carriers and response wavelengths of photocurrents of very long wavelength QWIPs. The material structures of QWIPs are first characterized by the photoluminescence measurements (PL) at room temperature and 77 K respectively. We have found and confirmed a distinctive difference between photocurrent of QWIPs with only one confined state in the quantum well (QW) and those binding two confined states, which resulted in different dependence of detection wavelength on the quantum well width. Also, we have investigated the dependence of response wavelength on several other parameters for very long wavelength QWIPs, such as barrier width and Al mole fraction.By calculating the density of photogenerated carriers in the continuum above the energy barriers using the PL calibrated QWIP structures, we have demonstrated that due to the high sample quality, the photocarriers can be either in miniband states (Bloch states in the multiple quantum wells), or they transport from one quantum well to the next in the form of propagating waves. We have further calculated the densities of photocarriers in the QWIPs reported in the literature. It is shown that the Bloch wave boundary conditions are appropriate for QWIPs with narrow QWs, whereas propagating wave boundary conditions are appropriate for wide QWs. (c) 2005 Published by Elsevier B.V.
机译：基于对能带结构和非常长的波长（> 14 pm）GaAs / AlGaAs量子阱（QW）红外光电探测器（QWIP）的光跃迁的详细研究，我们建立了实用的QWIP模型。我们研究决定长波长QWIP的光生载流子和光电流响应波长的因素。 QWIP的材料结构首先通过分别在室温和77 K下的光致发光测量（PL）来表征。我们已经发现并证实了量子阱（QW）中仅具有一个约束状态的QWIP的光电流与结合两个约束状态的QWIP的光电流之间的显着差异，这导致检测波长对量子阱宽度的依赖性不同。此外，我们研究了响应波长对非常长的波长QWIP的其他几个参数的依赖性，例如势垒宽度和Al摩尔分数。通过使用PL校准的QWIP结构计算能垒上方连续谱中的光生载流子的密度，我们已经证明，由于样品质量高，光电载流子可以处于微带态（多个量子阱中的布洛赫态），也可以以传播波的形式从一个量子阱传输到另一个量子阱。我们进一步计算了文献中报道的QWIP中光载流子的密度。结果表明，布洛赫波边界条件适合于窄QW的QWIP，而传播波边界条件适合于宽QW的QWIP。 （c）2005年由Elsevier B.V.

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