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首页> 外文期刊>Integrated Ferroelectrics >STUDY ON THE VARIATIONS OF MICROSTRUCTURES AND DOMAIN STRUCTURES OF Bi_(3.35)La_(0.85)Ti_3O_(12) FERROELECTRIC THIN FILMS FORMED BY TWO-STEP RAPID THERMAL ANNEALING (RTA) PROCESS UTILIZING PIEZORESPONSE FORCE MICROSCOPE (PFM)
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STUDY ON THE VARIATIONS OF MICROSTRUCTURES AND DOMAIN STRUCTURES OF Bi_(3.35)La_(0.85)Ti_3O_(12) FERROELECTRIC THIN FILMS FORMED BY TWO-STEP RAPID THERMAL ANNEALING (RTA) PROCESS UTILIZING PIEZORESPONSE FORCE MICROSCOPE (PFM)

机译：Bi-（3.35）La_（0.85）Ti_3O_（12）铁电薄膜的显微结构和域结构变化的研究是通过两步快速热退火（RTA）过程利用压电响应（力）力形成

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摘要

Recently, La-substituted Bi_4Ti_3O_(12) (BLT) has been widely studied as a candidate material for FeRAM due to its superior properties like high fatigue endurance with relatively lower crystallization temperature. In this stud}', we attempted to examine ferroelectric properties of various BLT thin films that were made using two-step rapid thermal annealing (RTA) process. The microstructure of BLT thin film is appeared as a critical factor to maximize ferroelectric properties. We found that the 2nd annealing temperature in two-step RTA process played an important role in determining the crystalline orientation of BLT thin films. Grain orientations of the BLT thin films were interpreted based on x-ray diffraction (XRD) in conjunction with piezoresponse images that were obtained utilizing piezoresponse force microscope (PFM). In addition, the results were correlated with the hysteresis loops.
机译：近年来，由于La-取代的Bi_4Ti_3O_（12）（BLT）具有优异的性能，例如较高的疲劳强度和相对较低的结晶温度，因此已被广泛用作FeRAM的候选材料。在本研究中，我们尝试检查使用两步快速热退火（RTA）工艺制成的各种BLT薄膜的铁电性能。 BLT薄膜的微观结构似乎是最大化铁电性能的关键因素。我们发现，两步RTA工艺中的第二退火温度在确定BLT薄膜的晶体取向方面起着重要作用。基于X射线衍射（XRD）结合使用压电响应力显微镜（PFM）获得的压电响应图像来解释BLT薄膜的晶粒取向。另外，结果与磁滞回线相关。

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