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首页> 外文期刊>Integrated Ferroelectrics >High Quality Ba_xSr_(1-x)TiO_3 Films Grown by MOCLD and Novel Ferroelectric/Ferrite Structures for Dual-Tuning Microwave Devices
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High Quality Ba_xSr_(1-x)TiO_3 Films Grown by MOCLD and Novel Ferroelectric/Ferrite Structures for Dual-Tuning Microwave Devices

机译：MOCLD生长的高质量Ba_xSr_（1-x）TiO_3薄膜和新型双调谐微波器件的铁电/铁氧体结构

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摘要

Excellent single crystal Ba_xSr_(1-x)TiO_3 (BST) films were grown on LaAlO_3 substrates using the metal-organic chemical liquid deposition (MOCLD) method. Very low losses (tan#delta# approx 0.002-0.008) were measured from these films at 400 KHz. Biaxially oriented BST films were successfully grown on polycrystalline Y16 substrates using both MOCLD and pulsed laser deposition methods with biaxially oriented MgO and YSZ buffer layers. The dielectric losses of the films range from 0.005 to 0.015 while 25percent of dielectric constant change was observed with 40V bias voltage up to 10 MHz. Both the dissipation and dielectric constant of the films remained nearly constants over a wide temperature range (77 K to 380 K). A dual-tuning microwave coplanar phase shifter using a BST film grown on a MgO buffered polycrystalline Y16 substrate was fabricated. A significant phase shift was observed in 6Hz frequency range when an electric bias or a magnetic field was applied to the device.
机译：使用金属有机化学液体沉积（MOCLD）方法在LaAlO_3衬底上生长了出色的Ba_xSr_（1-x）TiO_3（BST）单晶膜。在400 KHz下从这些薄膜测得非常低的损耗（tan＃delta＃约0.002-0.008）。使用MOCLD和脉冲激光沉积方法以及双轴取向的MgO和YSZ缓冲层，在多晶Y16衬底上成功地生长了双轴取向的BST膜。薄膜的介电损耗范围为0.005至0.015，而在40V偏置电压高达10 MHz的情况下，观察到介电常数变化的25％。薄膜的耗散率和介电常数在很宽的温度范围（77 K至380 K）内几乎保持恒定。使用在MgO缓冲的多晶Y16衬底上生长的BST膜制造了双调谐微波共面移相器。当向器件施加电偏置或磁场时，在6Hz频率范围内观察到明显的相移。

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