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Comparative Investigations of Submicrosecond Switches Based on Reverse Switch-on Dynistors and Deep-Level Dynistors

机译:基于反向接通测功器和深电平测功器的亚微秒开关的比较研究

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摘要

Results of comparative investigations of switches on single reverse switch-on dynistors (RSDs) and deep-level dynistors (DLDs) during switching high-power submicrosecond current pulses in conditions, when the control circuits feature the same power consumption, are given. It is shown that, in this mode, the DLD switches have certain advantages specified by a smaller intrinsic inductance value and more efficient switching during the heating of the dynistors.
机译:给出了在控制电路具有相同功耗的情况下,在切换高功率亚微秒电流脉冲期间,单个反向接通式可控硅(RSD)和深电平可控硅(DLD)上的开关的比较研究结果。可以看出,在这种模式下,DLD开关具有某些优点,这些优点是,在加热电阻器期间,固有电感值较小,开关效率更高。

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