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Sensitized luminescence through nanoscopic effects of ZnO encapsulated in SiO2:Tb3+ sol gel derived phosphor

机译:通过封装在SiO2:Tb3+溶胶衍生荧光粉中的ZnO的纳米效应实现敏化发光

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摘要

Terbium (1 mol) doped ZnO-SiO2 binary system was prepared by a sol-gel process. Nanoscopic effects of ZnO on the photoluminescence (PL) and the cathodoluminescence (CL) properties were studied. Defects emission from ZnO nanoparticles was measured at 560 nm and the line emission from Tb3+ ions in SiO2:Tb3+ and ZnO-SiO2:Tb3+ with a major peak at 542 nm was measured. The PL excitation wavelength for 542 nm Tb3+ emission was measured at similar to 320 nm in both SiO2:Tb3+ and ZnO-SiO2:Tb3+. The CL data showed quenched luminescence of the ZnO nanoparticles at 560 nm from a composite of ZnO-SiO2:Tb3+ and a subsequent increase in 542 nm emission from the Tb3+ ions. This suggests that energy was transferred from the ZnO nanoparticles to enhance the green emission of the Tb3+ ions. The PL and CL properties of ZnO-SiO2:Tb3+ binary system and possible mechanism for energy transfer from the ZnO nanoparticles to Tb3+ ions are discussed.
机译:采用溶胶-凝胶法制备了掺杂铽(1 mol%)的ZnO-SiO2二元体系。研究了ZnO对光致发光(PL)和阴极发光(CL)性能的纳米效应。在560 nm处测量了ZnO纳米颗粒的缺陷发射,并测量了SiO2:Tb3+和ZnO-SiO2:Tb3+中Tb3+离子的线发射,主峰在542 nm处。在SiO2:Tb3+和ZnO-SiO2:Tb3+中,542 nm Tb3+发射的PL激发波长与320 nm相似。CL数据显示,ZnO-SiO2:Tb3+复合材料在560 nm处的ZnO纳米颗粒猝灭发光,随后Tb3+离子的542 nm发射增加。这表明能量从ZnO纳米颗粒转移,以增强Tb3+离子的绿色发射。讨论了ZnO-SiO2:Tb3+二元体系的PL和CL性质以及ZnO纳米颗粒向Tb3+离子能量转移的可能机制.

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