EVOLUTION AND ORDERING OF MULTILAYER Ge QUANTUM DOTS ON Si(001)

M. JEYANTHINATH; M. J. XU; X.-S. WANG

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EVOLUTION AND ORDERING OF MULTILAYER Ge QUANTUM DOTS ON Si(001)

机译：Si（001）上多层锗量子点的演化和有序化

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Evolution and ordering of multilayer Ge islands (up to 14 layers) on Si(00l), prepared by physical vapor deposition at about 550℃; were studied using Scanning Tunneling Microscope (STM), In the growth process, it was observed that long huts split during the deposition of Si buffer layer. It can be explained as a consequence of strain due to lattice mismatch and intermixing of Si and Ge to form solid solution. Such a mechanism of splitting could lead the dots to order and uniformity in the subsequent layers. Apart from splitting of huts, the surface corrugation of Si spacer layer influences the nucleation of Ge islands in the next layer.

机译：在约550℃下通过物理气相沉积制备的Si（00l）上多层Ge岛（最多14层）的演化和有序性;用扫描隧道显微镜（STM）进行了研究，在生长过程中，观察到长的小屋在硅缓冲层的沉积过程中裂开了。可以解释为由于晶格失配以及Si和Ge混合形成固溶体而引起的应变的结果。这种分裂机制可能会导致点在后续层中变得有序和均匀。除小屋分裂外，Si间隔层的表面波纹还会影响下一层中Ge岛的形核。

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《International journal of nanoscience》 |2004年第5期|共9页
作者
M. JEYANTHINATH; M. J. XU; X.-S. WANG;
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正文语种 eng
中图分类理论物理学;
关键词
Quantum dots; Self-assembly; Germanium; Silicon; Scanning tunneling microscopy;

机译：量子点自组装锗硅扫描隧道显微镜;

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1. EVOLUTION AND ORDERING OF MULTILAYER Ge QUANTUM DOTS ON Si(001) [J] . M. JEYANTHINATH, M. J. XU, X.-S. WANG International journal of nanoscience . 2004,第4a5期

机译：Si（001）上多层锗量子点的演化和有序化
2. Polarized Raman spectroscopy of multilayer Ge/Si(001) quantum dot heterostructures [J] . Baranov AV, Fedorov AV, Perova TS, Journal of Applied Physics . 2004,第5期

机译：多层Ge / Si（001）量子点异质结构的偏振拉曼光谱
3. Vertically self-organized Ge/Si(001) quantum dots in multilayer structures [J] . Le Thanh V., Boucaud P., Fortuna F., Physical Review, B. Condensed Matter . 1999,第8期

机译：多层结构中的垂直自组织Ge / Si（001）量子点
4. POLARIZED RAMAN SPECTROSCOPY OF SINGLE LAYER AND MULTILAYER Ge/Si(001) QUANTUM DOT HETEROSTRUCTURES [C] . A. V. Baranov, T. S. Perova, S. Solosin, NATO Advanced Research Workshop on Frontiers of Multifunctional Integrated Nanosystems . 2004

机译：单层和多层GE / Si（001）量子点异质结构的偏振拉曼光谱
5. Phosphorus incorporation during silicon(001):phosphorus gas-source molecular beam epitaxy: Effects on film growth kinetics, surface morphology, and the self-organization of germanium quantum dot overlays. [D] . Cho, Benjamin. 2007

机译：硅（001）：磷气源分子束外延过程中的磷掺入：对薄膜生长动力学，表面形态和锗量子点覆盖层的自组织的影响。
6. Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature [O] . Zhi Liu, Buwen Cheng, Weixuan Hu, 2012

机译：通过提高过度生长温度增强Si（001）衬底上多层Ge量子点的光致发光
7. Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature [O] . 2012

机译：通过提高过度生长温度增强Si（001）衬底上多层Ge量子点的光致发光

EVOLUTION AND ORDERING OF MULTILAYER Ge QUANTUM DOTS ON Si(001)

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