CROSS-SECTIONAL SCANNING TUNNELING MICROSCOPY OF BURIED HETEROSTRUCTURE LASERS

R. J. COBLEY; K. S. TENG; M. R. BROWN; T. G. G. MAFFEIS; S. P. WILKS

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CROSS-SECTIONAL SCANNING TUNNELING MICROSCOPY OF BURIED HETEROSTRUCTURE LASERS

机译：埋藏异质结构激光的截面扫描隧道显微镜

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A single-mode buried heterostructure laser has been imaged using Cross-Sectional Scanning Tunneling Microscopy (X-STM). The problem of positioning the tip on the restricted active region on the (110) face has been overcome using combined Scanning Electron Microscopy (SEM). In order to understand the change in the STM scans when biased, particularly the physical change in surface step defects caused by commercial sample preparation, the experimental setup has been modified to allow the sample to be biased. A simpler double quantum well test structure has been biased and it has been demonstrated that it is possible to continue performing STM whilst the device is powered, The change in the relative contrast across the image has been shown to be unaffected by this external bias for the range scanned, as predicted by a fully-coupled Poison drift-diffusion model calculated using Fermi-Dirac statistics.

机译：单模掩埋异质结构激光器已使用横断面扫描隧道显微镜（X-STM）成像。使用组合式扫描电子显微镜（SEM）已解决了将笔尖定位在（110）面上受限活动区域上的问题。为了理解偏置时STM扫描的变化，特别是由商业样品制备引起的表面台阶缺陷的物理变化，对实验设置进行了修改，以使样品能够偏置。一个更简单的双量子阱测试结构已经过偏置，并且已经证明可以在设备加电的同时继续执行STM。已经证明，图像的相对对比度的变化不受该外部偏置的影响。扫描范围，如使用费米-狄拉克（Fermi-Dirac）统计数据计算的完全耦合的毒物漂移扩散模型所预测的。

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《International journal of nanoscience》 |2004年第5期|共7页
作者
R. J. COBLEY; K. S. TENG; M. R. BROWN; T. G. G. MAFFEIS; S. P. WILKS;
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正文语种 eng
中图分类理论物理学;
关键词
InP; InGaAsP; Buried heterostructure; Single-mode; Bias; X-STM;

机译：InP;InGaAsP;埋藏异质结构;单模;Bias;X-STM;

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专利

1. Cross-sectional scanning tunneling microscopy and spectroscopy of strain in buried heterostructure lasers [J] . Cobley RJ, Teng KS, Maffeis TGG, Surface Science . 2006,第14期

机译：埋藏异质结构激光器中应变的截面扫描隧道显微镜和光谱学
2. Near-field scanning optical microscopy and near-field induced photocurrent investigations of buried heterostructure multiquantum well lasers. [J] . Ackland MP, Dunstan PR, Rees P Journal of Microscopy . 2005,第Pta3期

机译：掩埋异质结构多量子阱激光器的近场扫描光学显微镜和近场感应光电流研究。
3. Scanning differential spreading resistance microscopy on actively driven buried heterostructure multiquantum-well lasers [J] . Ban D., Sargent E.H., Dixon-Warren St.J. IEEE Journal of Quantum Electronics . 2004,第7期

机译：主动驱动掩埋异质结构多量子阱激光器的扫描差动扩展电阻显微镜
4. ELECTRICAL CHARACTERISATION OF Ⅲ-Ⅴ BURIED HETEROSTRUCTURE LASERS BY SCANNING CAPACITANCE MICROSCOPY [C] . O. DOUHERET, K. MAKNYS, S. ANAND, NATO Advanced Study Institute on Scanning Probe Microscopy: Characterization, Nanofabrication and Device Application of Functional Materials . 2005

机译：Ⅲ-ⅴ埋藏异质波动仪通过扫描电容显微镜电气表征
5. Cross-sectional and plan view scanning tunneling microscopy of GaAs heterostructures and surfaces. [D] . Pond, Kevin John. 1997

机译：GaAs异质结构和表面的横截面和平面图扫描隧道显微镜。
6. Transmission electron microscopy scanning tunneling microscopy and atomic force microscopy of the cell envelope layers of the archaeobacterium Methanospirillum hungatei GP1. [O] . G Southam, M Firtel, B L Blackford, 1993

机译：悬钩菌Methanospirillum hungatei GP1的细胞被膜层的透射电子显微镜扫描隧道显微镜和原子力显微镜。
7. Two-Dimensional Profiling of Carriers in a Buried Heterostructure Multi-Quantum-Well Laser: Calibrated Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy [O] . Ban, D., Sargent, E. H., Dixon-Warren, St. J., 2002

机译：埋入异质结构多量子阱激光器中载流子的二维轮廓分析：校准扫描扩展电阻显微镜和扫描电容显微镜

CROSS-SECTIONAL SCANNING TUNNELING MICROSCOPY OF BURIED HETEROSTRUCTURE LASERS

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