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首页> 外文期刊>Journal of Microscopy >Near-field scanning optical microscopy and near-field induced photocurrent investigations of buried heterostructure multiquantum well lasers.
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Near-field scanning optical microscopy and near-field induced photocurrent investigations of buried heterostructure multiquantum well lasers.

机译：掩埋异质结构多量子阱激光器的近场扫描光学显微镜和近场感应光电流研究。

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摘要

Buried heterostructure multiquantum well laser devices are investigated utilizing a near-field scanning optical microscope to characterize and correlate the surface topography, optical output and electronic properties of the device. Near-field photocurrent imaging has been used to accurately measure the unbiased buried heterostructure multiquantum well device in cross-section, successfully revealing the distribution of pn-junctions and their associated fields. Moreover, this has been accurately correlated with the physical structure of the device determined by simultaneous shear-force imaging of the surface. Topographic structure is manifested as a result of strain relaxation ( approximately 10(-10) m) of the cleaved cross-section. These imaging modes are similarly correlated with the optical output of the operational device mapped with 50 nm lateral resolution. The collection-mode measurements detected electroluminescence external to the active region, highlighting the existence of carrier recombination away from the multiquantum well device region. The combination and correlation of different near-field scanning optical microscope imaging modes proved powerful in the analysis of the buried heterostructure multiquantum well device, and was shown to assist in the identification of current leakage pathways within the structure.
机译：利用近场扫描光学显微镜对埋藏的异质结构多量子阱激光器件进行了研究，以表征和关联该器件的表面形貌，光学输出和电子特性。近场光电流成像已被用于精确测量横截面中的无偏掩埋异质结构多量子阱器件，成功揭示了pn结及其相关场的分布。而且，这已与通过表面同时进行剪切力成像确定的设备的物理结构精确相关。形貌结构是由于切开的横截面的应变松弛（大约10（-10）m）而导致的。这些成像模式类似地与以50 nm横向分辨率映射的操作设备的光学输出相关。收集模式的测量检测到了有源区外部的电致发光，突出了背离多量子阱器件区的载流子复合的存在。在埋入异质结构多量子阱器件的分析中，不同近场扫描光学显微镜成像模式的组合和相关性被证明是有力的，并被证明有助于识别结构中的电流泄漏路径。

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