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首页> 外文期刊>International Journal of Modern Physics, B. Condensed Matter Physics, Statistical Physics, Applied Physics >Fabrication and characteristics of silicon micro-tip arrays
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Fabrication and characteristics of silicon micro-tip arrays

机译：硅微尖端阵列的制备和特性

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摘要

Si field emission arrays (FEAs) were produced using simple optical lithography and plasma dry etching. By optimizing plasma etching conditions, we achieved uniform ultra-sharp emitters with 50 nm radius, 3.6 μm height, 60° cone angle, and 1.38×106 tips/cm~2 packing density. For the fabricated FEAs, it was found that turn-on voltage was 850 V and the field emission current was 24 μA at 1100 V. It was also found that field enhancement factor γ of the fabricated Si FEAs was approximately 58. Nanomechanical characterization of Si necked tips array was performed by nanoindentation technology. The critical buckling load and critical stress of the Si necked tips array were 570 μN and 1.192 GPa, respectively.
机译：使用简单的光学光刻和等离子干法刻蚀生产了Si场发射阵列（FEA）。通过优化等离子刻蚀条件，我们获得了半径为50 nm，高度为3.6μm，锥角为60°且填充密度为1.38×106尖端/ cm〜2的均匀超锐度发射器。对于制成的FEA，发现在1100 V时的开启电压为850 V，场发射电流为24μA。还发现，制成的Si FEA的场增强因子γ约为58。Si的纳米力学表征颈尖阵列通过纳米压痕技术进行。 Si颈尖阵列的临界屈曲载荷和临界应力分别为570μN和1.192 GPa。

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