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首页> 外文期刊>International Journal of Modern Physics, B. Condensed Matter Physics, Statistical Physics, Applied Physics >Growth of MgB2 thin films by means of in situ deposition techniques
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Growth of MgB2 thin films by means of in situ deposition techniques

机译：通过原位沉积技术生长MgB2薄膜

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摘要

We report on the growth of MgB2 thin films by means of Pulsed Laser Deposition (PLD) and Electron Beam (EB) deposition techniques. In order to develop an in-situ deposition procedure both techniques have been exploited following two approaches: the "as grown" procedure, where the superconducting phase is formed during the film growth, and no further process is performed, and the "annealing" procedure, where precursor layers are deposited and annealed in argon atmosphere. In the case of EB evaporated films, the "as grown" procedure revealed to be inadequate, because of the low reactivity of the thermally evaporated species and the high magnesium volatility. On the contrary, using PLD, the higher reactivity of the plasma species promotes the formation of the superconducting phase at deposition temperature as low as 350degreesC. In the "annealing" procedure, different kinds of precursor layers have been studied, in order to reduce and prevent the fast Mg evaporation at high temperature. Different annealing processes were investigated in order to promote the interdiffusion and reaction between Mg and B. The films were characterised by means of resistivity measurements and X-ray analyses. The surface morphology was observed by SEM microscopy. [References: 9]
机译：我们通过脉冲激光沉积（PLD）和电子束（EB）沉积技术报告了MgB2薄膜的生长。为了开发原位沉积程序，已通过以下两种方法开发了这两种技术：“生长”程序，其中在膜生长过程中形成超导相，并且不执行进一步的处理;“退火”程序，在此沉积前体层并在氩气中进行退火。在EB蒸发薄膜的情况下，由于热蒸发物质的反应性低和镁的高挥发性，“生长”过程显示是不充分的。相反，使用PLD，等离子体物质的较高反应性在沉积温度低至350℃时促进了超导相的形成。在“退火”程序中，已经研究了不同种类的前体层，以减少和防止高温下快速的Mg蒸发。为了促进Mg和B之间的相互扩散和反应，研究了不同的退火工艺。通过电阻率测量和X射线分析对薄膜进行了表征。通过SEM显微镜观察表面形态。 [参考：9]

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