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首页> 外文期刊>International Journal of Modern Physics, B. Condensed Matter Physics, Statistical Physics, Applied Physics >Resonant peaks of the linear optical absorption and rectification coefficients in GaAs/GaAlAs quantum well: Combined effects of intense laser, electric and magnetic fields
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Resonant peaks of the linear optical absorption and rectification coefficients in GaAs/GaAlAs quantum well: Combined effects of intense laser, electric and magnetic fields

机译：GaAs / GaAlAs量子阱中线性光学吸收和整流系数的共振峰：强激光，电场和磁场的组合作用

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摘要

In this study, the resonant peaks of the linear optical absorption (OA) and rectification coefficients in GaAs/GaAlAs quantum well are calculated as dependent on the applied electric field (F), the magnetic field (B) and the laser field intensity parameter (alpha(0)). Our results show that the shape of confined potential profile, the energy levels and the dipole moment matrix elements are changed as dependent on the F, B and alpha(0). Also, the resonant peaks of the OA and rectification coefficients depend on the applied external field effects. Therefore, the variation of the resonant peaks of these coefficients which can be appropriate for various optical modulators and infrared optical device applications can be smoothly obtained by the alteration electric, magnetic and intense laser field.
机译：在这项研究中，根据所施加的电场（F），磁场（B）和激光场强度参数（Ga），计算GaAs / GaAlAs量子阱中线性光学吸收（OA）的共振峰和整流系数。 alpha（0））。我们的结果表明，受限电势的形状，能级和偶极矩矩阵元素随F，B和alpha（0）的变化而变化。而且，OA和整流系数的谐振峰取决于所施加的外部场效应。因此，通过改变电场，磁场和强激光场，可以平滑地获得适合于各种光学调制器和红外光学器件应用的这些系数的共振峰的变化。

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