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首页> 外文期刊>International journal of PIXE >TRACE ELEMENT ANALYSIS IN AN OPTIMIZED SET-UP FOR TOTAL REFLECTION PIXE (TPIXE)
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TRACE ELEMENT ANALYSIS IN AN OPTIMIZED SET-UP FOR TOTAL REFLECTION PIXE (TPIXE)

机译：总反射像素（TPIXE）优化设置中的微量元素分析

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摘要

A newly constructed chamber for measuring with MeV proton beams at small incidence angles (0 to 35 mrad) is used to analyse trace elements on flat surfaces such as Si wafers, quartz substrates and perspex. , This set-up is constructed in such a way that the X-ray detector can reach very large solid angles, larger than 1 sr. Using these large solid angles in combination with the reduction of bremsstrahlungs background, lower limits of detection (LOD) using TPIXE can be obtained as compared with PIXE in the conventional geometry. Standard solutions are used to determine the LODs obtainable with TPIXE in the optimized setup. These solutions contain traces of As and Sr with concentrations down to 20 ppb in an insulin solution. The limits of detection found are compared with earlier ones obtained with TPIXE in a non optimized setup and with TXRF results.
机译：一种用于以小入射角（0至35毫拉德）用MeV质子束进行测量的新建腔室，用于分析平坦表面上的痕量元素，例如Si晶片，石英基板和有机玻璃。该装置的构造使得X射线探测器可以达到非常大的立体角，大于1 sr。与常规几何图形中的PIXE相比，结合使用较大的立体角和减少致背景，可以获得使用TPIXE的较低检测限（LOD）。使用标准解决方案来确定在最佳设置下可通过TPIXE获得的LOD。这些溶液在胰岛素溶液中含有微量的As和Sr，其浓度低至20 ppb。将发现的检测限与通过TPIXE在非优化设置中获得的较早检测限以及TXRF结果进行比较。

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