• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>ECS Journal of Solid State Science and Technology >Photoluminescence Characterization of Defects in Rapidly Annealed Ultra Shallow Junctions
【24h】

Photoluminescence Characterization of Defects in Rapidly Annealed Ultra Shallow Junctions

机译：快速退火超浅结的缺陷的光致发光特性

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Defect formation and annihilation in ultra-shallow junctions (USJs), before and after rapid thermal annealing, are optically characterized by photoluminescence (PL) and UV Raman spectroscopy. Defect formation and annihilation in the USJ samples, by ion implantation and subsequent rapid thermal annealing, are characterized by transmission electron microscopy and deep-level transient spectroscopy (DLTS). It is confirmed that the defects are formed in the deep region beneath the ultra-shallow implanted layer. The defects degrade the PL intensity. The contribution of nonradiative recombination in the implanted layer was evaluated by PL measurements, after removal of the implanted layer, by repeated nano-meter scale wet etching. The PL technique clearly identifies defects formed in the deep region, i.e., the depletion layer. Compared with the results obtained by DLTS, PL measurements, conducted at room temperature, enable us to nondestructively characterize defects in the USJ, on an in-line basis, at a concentration in the order of 10~(12) cm~(-3) or below. This cannot be achieved by conventional techniques, such as the four-point probe method.
机译：在快速热退火之前和之后，超浅结（USJs）中的缺陷形成和are灭通过光致发光（PL）和UV拉曼光谱进行了光学表征。 USJ样品中的缺陷形成和ni灭（通过离子注入和随后的快速热退火）由透射电子显微镜和深层瞬态光谱法（DLTS）表征。可以确认，缺陷在超浅注入层下方的深部区域形成。缺陷降低了PL强度。在去除注入层之后，通过重复的纳米级湿法蚀刻，通过PL测量来评估注入层中非辐射复合的贡献。 PL技术清楚地识别出在深区域即耗尽层中形成的缺陷。与通过DLTS获得的结果相比，在室温下进行的PL测量使我们能够以在线方式对USJ中的缺陷进行非破坏性表征，浓度约为10〜（12）cm〜（-3 ）或以下。这不能通过常规技术来实现，例如四点探针法。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号