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首页> 外文期刊>ECS Journal of Solid State Science and Technology >Phase Segregation Limit in ZnCdO Thin Films Deposited by Sol-Gel Method: A Study of Structural, Optical and Electrical Properties
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Phase Segregation Limit in ZnCdO Thin Films Deposited by Sol-Gel Method: A Study of Structural, Optical and Electrical Properties

机译：溶胶-凝胶法沉积ZnCdO薄膜的相偏析极限：结构，光学和电学性质的研究

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摘要

Zn_(1-y)Cd_yO ternary alloyed thin films with different Cd volume ratios (y = 0.01 to 0.35) were successfully deposited by sol-gel spin coating method on p-Si (100) and quartz glass substrates. XRD results revealed that the thin films were polycrystalline in nature and their crystallinity was reduced with Cd content. Phase segregation as cubic CdO was observed for Cd content y ≥ 0.15. Residual stress in the films was strongly influenced by Cd concentrations and its maximum value was observed near the phase segregation limit. Raman results also confirmed that the higher Cd contents distorted the wurtzite structure. UV-Vis transmission spectra exhibited reduction in bandgap of ZnCdO films with increase of Cd incorporation. The photoluminescence spectra showed near band edge emission in the blue region at lower Cd contents (y > = 0.12). This emission splits into UV and green-yellow emissions for y≥ 0.15.The Hall measurements were performed to estimate the carrier concentration and mobility as a function of Cd doping.
机译：通过溶胶-凝胶旋涂法成功地在p-Si（100）和石英玻璃基板上沉积了具有不同Cd体积比（y = 0.01至0.35）的Zn_（1-y）Cd_yO三元合金薄膜。 XRD结果表明该薄膜本质上是多晶的，并且其结晶度随Cd含量的降低而降低。当Cd含量y≥0.15时，观察到相偏析为立方CdO。薄膜中的残余应力受Cd浓度的强烈影响，在相分离极限附近观察到其最大值。拉曼结果还证实，较高的Cd含量会使纤锌矿结构变形。 UV-Vis透射光谱显示，随着Cd掺入量的增加，ZnCdO薄膜的带隙减小。光致发光光谱在较低的Cd含量下（y> = 0.12）在蓝色区域显示了近能带边缘发射。当y≥0.15时，该发射分为紫外发射和绿黄色发射。霍尔测量用于估算载流子浓度和迁移率与Cd掺杂的关系。

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