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首页> 外文期刊>ECS Journal of Solid State Science and Technology >Low-Temperature Surface Passivation of Moderately Doped Crystalline Silicon by Atomic-Layer-Deposited Hafnium Oxide Films
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Low-Temperature Surface Passivation of Moderately Doped Crystalline Silicon by Atomic-Layer-Deposited Hafnium Oxide Films

机译：原子层沉积氧化Ha薄膜对中掺杂晶体硅的低温表面钝化

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摘要

Hafnium oxide (HfO_2) films synthesized by thermal atomic layer deposition (ADD) are investigated for low-temperature surface passivation of moderately doped crystalline silicon (c-Si). At intermediate bulk injection levels, effective surface recombination velocities of 55 cm/s and 24 cm/s are achieved on 2.1 Ωemp-type and 3.3 Ω cm n-type c-Si, respectively, demonstrating a good level of surface passivation. Contactless corona-voltage measurements show that the good passivation quality is due to both chemical passivation with low interface defect density (~10~(11) eV~(-1) cm~(-2)) and field-effect passivation by negative charges (~10~(12) cm~(-2)) in the HfO_2 film, which is particularly beneficial for the passivation of p-type c-Si. Fourier transform infrared spectroscopy and cross-sectional transmission electron microscopy experiments are conducted to provide insight into the surface passivation mechanism of HfO_2 on c-Si.
机译：研究了通过热原子层沉积（ADD）合成的氧化f（HfO_2）膜对中等掺杂晶体硅（c-Si）的低温表面钝化的过程。在中等批量注入水平下，在2.1Ωemp型和3.3Ωcm n型c-Si上分别实现了55 cm / s和24 cm / s的有效表面重组速度，这表明表面钝化水平良好。非接触电晕电压测量表明，良好的钝化质量是由于化学钝化和低界面缺陷密度（〜10〜（11）eV〜（-1）cm〜（-2））和负电荷引起的场效应钝化所致。在HfO_2薄膜中（〜10〜（12）cm〜（-2）），这对p型c-Si的钝化特别有利。进行了傅里叶变换红外光谱和横截面透射电子显微镜实验，以洞察H-O_2在c-Si上的表面钝化机理。

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