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首页> 外文期刊>ECS Journal of Solid State Science and Technology >Study of Conduction Modes of Time to Dielectric Breakdown Reliability in Cu Damascene Structures
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Study of Conduction Modes of Time to Dielectric Breakdown Reliability in Cu Damascene Structures

机译：铜镶嵌结构中介电击穿可靠性时间的传导模式研究

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Low k time-dependent dielectric breakdown is increasingly becoming a major issue at the 45 nm technology node and beyond. Although TDDB models, such as the E model, the √E model and the 1/E model, have been extensively explored, determining the back end of line processing direction for TDDB warrants further study. This study attempts to determine whether the thickness of the etching stop layer film influences the electron conduction mechanism. Cu damascene structures were designed following three approaches with various thickness of the etching stop layer : Co/ESL = 0 A-550 A (low-k: SiCO k = 3.1), Cu/ESL = 0 A-275 A (low-k: SiCO k = 2.5) and Co/ESL = 0 A-275 A (low-k: SiCO k = 2.5). The application of capping material Co is warranted for electron emission suppression, but the oxygen attacking from subsequent low-k deposition is a concern. In addition, greater ESL thickness offers paths for electron conduction which worsens TDDB; i.e., less ESL thickness is better. Therefore, the combination of Co with SiH_4 treatment addresses optimized conditions to achieve an ESL-less application for TDDB enhancement.
机译：低k随时间变化的介电击穿在45 nm技术节点及以后逐渐成为一个主要问题。尽管已经广泛探索了TDDB模型，例如E模型，√E模型和1 / E模型，但是确定TDDB的行处理方向的后端仍需要进一步研究。该研究试图确定蚀刻停止层膜的厚度是否影响电子传导机理。按照三种方法设计了具有不同蚀刻终止层厚度的铜镶嵌结构：Co / ESL = 0 A-550 A（低k：SiCO k = 3.1），Cu / ESL = 0 A-275 A（低k ：SiCO k = 2.5）和Co / ESL = 0 A-275 A（低k：SiCO k = 2.5）。覆盖材料Co的应用保证了电子发射的抑制，但是随后的低k沉积会侵蚀氧气。另外，更大的ESL厚度为电子传导提供了路径，这使TDDB恶化;即，越少的ESL厚度越好。因此，Co与SiH_4处理的组合解决了优化条件，从而实现了无ESL的TDDB增强应用。

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