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首页> 外文期刊>ECS Journal of Solid State Science and Technology >Examination of Salicylaldehyde as a Surface Modifier of Manganese for Application in Chemical Mechanical Planarization
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Examination of Salicylaldehyde as a Surface Modifier of Manganese for Application in Chemical Mechanical Planarization

机译：水杨醛作为锰的表面改性剂在化学机械平面化中的应用

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摘要

Mn based self-aligned diffusion barriers are promising for incorporation in the copper interconnects designed for the <22 ran technology node. However, in the current metallization scheme of chemical mechanical planarization (CMP), the processing of these barrier lines presents a specific challenge, which is rooted in the intrinsic corrosion characteristics of the Cu-Mn bimetallic couple. Since the Mn component of the self-aligned barrier film is electrochernically active compared to its adjacent Cu lines, the Cu-barrier interface of such a device tends to galvanically corrode in the chemical slurries used for CMP. Employing electrochemical techniques and a model galvanic system of polycrystalline Mn and Cu electrodes, the present work focuses on developing a strategic chemical approach to controlling this corrosion. The results demonstrate that, in the alkaline slurry environment (pH = 9-12, frequently used for barrier-CMP), a relatively low concentration (0.5 mM) of salicylaldehyde can minimize the galvanic corrosion of Mn while maintaining the latter's CMP-specific surface activity. The underlying mechanisms of these effects are probed with open circuit potential measurements, voltammetry and impedance spectroscopy.
机译：基于Mn的自对准扩散势垒有望纳入用于<22 ran技术节点的铜互连中。但是，在当前的化学机械平面化（CMP）金属化方案中，对这些势垒线的处理提出了一个特定的挑战，其根源在于Cu-Mn双金属对的固有腐蚀特性。由于自对准阻挡膜的Mn成分与其相邻的Cu线相比具有电化学活性，因此这种器件的Cu阻挡层界面容易在CMP中使用的化学浆料中发生电腐蚀。利用电化学技术和多晶锰和铜电极的模型电镀系统，本工作着重于开发控制该腐蚀的战略化学方法。结果表明，在碱性浆料环境中（pH = 9-12，常用于屏障CMP），相对较低的水杨醛浓度（0.5 mM）可以使Mn的电偶腐蚀最小化，同时保持Mn的CMP特定表面活动。这些影响的潜在机制通过开路电势测量，伏安法和阻抗光谱法进行探讨。

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