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首页> 外文期刊>ECS Journal of Solid State Science and Technology >Smooth and Conformal TiO_2 Thin-Film Formation Using Supercritical Fluid Deposition
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Smooth and Conformal TiO_2 Thin-Film Formation Using Supercritical Fluid Deposition

机译：超临界流体沉积法制备光滑共形的TiO_2薄膜

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摘要

Conformal TiO_2 having a smooth surface was deposited using a flow-type reactor for supercritical fluid deposition (SCFD). Ti(O-iPr)_2(tmhd)_2 was selected as the best candidate for SCFD from among three candidates because it exhibited the best results according to the following criteria: solubility in supercritical CO_2(_(SC)CO_2), carbon impurities in the TiO_2, and surface morphology of the deposited film. The growth rate increased with increasing temperature from 200 to 300°C. The activation energy in this temperature range was measured to be about 46.3 kJ/mol. Compared with conventional methods, such as chemical vapor deposition (CVD; activation energy of 85 kJ/mol, decomposition temperature above 450°C), TiO_2-SCFD had a much lower activation energy owing to the solvent effect of SCCO_2. We also examined the growth-rate dependence on the precursor concentration and found first-order reaction kinetics such that the surface reaction rate constant (k_s) was as low as 2.0 x 10~(-6) m/s at 300°C. This process resulted in good step coverage during film formation on trenches with an aspect ratio of 12.5.
机译：使用用于超临界流体沉积的流式反应器（SCFD）沉积具有光滑表面的共形TiO_2。选择Ti（O-iPr）_2（tmhd）_2作为SCFD的最佳候选者，因为它根据以下标准表现出最好的结果：在超临界CO_2（_（SC）CO_2）中的溶解度， TiO_2和沉积膜的表面形态。生长速率随温度从200升高到300°C而增加。在该温度范围内的活化能经测量为约46.3kJ / mol。与传统方法（例如化学气相沉积（CVD;活化能为85 kJ / mol，分解温度高于450°C））相比，由于SCCO_2的溶剂效应，TiO_2-SCFD的活化能要低得多。我们还研究了生长速率对前驱物浓度的依赖性，并发现了一级反应动力学，因此在300℃下表面反应速率常数（k_s）低至2.0 x 10〜（-6）m / s。该工艺在沟槽上以12.5的纵横比进行成膜时获得了良好的台阶覆盖率。

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