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首页> 外文期刊>ECS Journal of Solid State Science and Technology >InZnSnO-Based Electronic Devices for Flat Panel Display Applications
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InZnSnO-Based Electronic Devices for Flat Panel Display Applications

机译：用于平板显示应用的基于InZnSnO的电子设备

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摘要

This work demonstrates the versatility of amorphous InZnSnO (a-IZTO) oxide semiconductor, covering from the thin film transistor (TFT) to the resistive random access memory (RRAM) technologies for system~on-panel applications. The high-performance a-IZTO TFTs with effective carry mobility of 39.6 cm~2/V s, threshold voltage of -0.28 V and subthreshold swing of 0.25 decade/V are obtained in this study. Thermal post-annealing also was used to provide stable electrical characteristics with a few threshold voltage shift after positive gate bias stress. On the other hand, the RRAM device with a-IZTO film acting as active layer exhibits superior bipolar resistive switching characteristics. The wide (>10) resistance window and the stability endurance of hundreds cycle are achieved. Both of the proposed a-IZTO TFT and RRAM have promising potential to be integrated with a-IZTO-based periphery electronic circuits for flat-panel display applications.
机译：这项工作证明了非晶InZnSnO（a-IZTO）氧化物半导体的多功能性，涵盖了从薄膜晶体管（TFT）到电阻随机存取存储器（RRAM）技术的面板上系统应用。本研究获得了有效载流子迁移率为39.6 cm〜2 / V s，阈值电压为-0.28 V和亚阈值摆幅为0.25 October / V的高性能a-IZTO TFT。热后退火还用于提供稳定的电气特性，在正栅极偏置应力后会有一些阈值电压漂移。另一方面，具有a-IZTO膜作为活性层的RRAM器件表现出优异的双极电阻切换特性。实现了宽（> 10）的电阻窗口和数百个循环的稳定性。拟议的a-IZTO TFT和RRAM都具有与平板显示应用中基于a-IZTO的外围电子电路集成的潜力。

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