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Effect of the Hydrogen Peroxide on the Ti_(0.4)Sb_2Te_3 Chemical Mechanical Polishing in Acidic Slurry

机译:过氧化氢对酸性浆料中Ti_(0.4)Sb_2Te_3化学机械抛光的影响

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In this work, chemical mechanical polishing (CMP) of Ti_(0.4)Sb_2Te_3 (TST) was investigated in the presense of hydrogen peroxide (H_2O_2) as an oxidizer. The polishing rate of TST reached a maximum at 0.5 wt% H_2O_2 concentration and then decreased with a further increase in H_2O_2 concentration. The eletrochemical techniques were applied to investigate the passivation behabivor of the TST under static eonditons at pH 2.3 with varying H_2O_2 concentrations. The TST static etched surface morphology indicated that there were strong chemical reactions taking place between TST surface and H_2O_2 at 0.5 wt% H_2O_2 concentration. With the H_2O_2 concentration further increasing, the chemical reactions were inhibited by the passivation behavior, which was obtained using eletrochemical techniques. In addition, the surface compounds of the TST in the presence of H_2O_2 were analyzed by the X-ray photoelectron spectroscope (XPS). Finally, Atomic Force Microscope (AFM) was used to characterize the surface quality after CMP. By combining the experimental results, we proposed a possible mechanism of TST in the presence of H_2O_2.
机译:在这项工作中,以过氧化氢(H_2O_2)为氧化剂,研究了Ti_(0.4)Sb_2Te_3(TST)的化学机械抛光(CMP)。在0.5 wt%的H_2O_2浓度下,TST的抛光速率达到最大值,然后随着H_2O_2浓度的进一步增加而降低。运用电化学技术研究了在不同浓度的H_2O_2条件下,在pH 2.3的静态条件下,TST的钝化行为。 TST静态刻蚀后的表面形貌表明,在0.5wt%的H_2O_2浓度下,TST表面与H_2O_2之间发生了强烈的化学反应。随着H_2O_2浓度的进一步增加,化学反应受到钝化行为的抑制,钝化行为是通过电子化学技术获得的。此外,通过X射线光电子能谱仪(XPS)分析了在H_2O_2存在下TST的表面化合物。最后,使用原子力显微镜(AFM)表征CMP后的表面质量。结合实验结果,我们提出了在H_2O_2存在下TST的可能机制。

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