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首页> 外文期刊>ECS Journal of Solid State Science and Technology >Vacuum Referred Binding Energy of the Single 3d, 4d,or 5d Electron in Transition Metal and Lanthanide Impurities in Compounds
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Vacuum Referred Binding Energy of the Single 3d, 4d,or 5d Electron in Transition Metal and Lanthanide Impurities in Compounds

机译：化合物中过渡金属和镧系元素杂质中单个3d，4d或5d电子的真空参考结合能

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摘要

The vacuum referred binding energy (VRBE) of the single electron in the lowest energy 3d level of Sc~(2+), V~(4+), Cr~(5+), the lowest 4d level of Y~(2+), Zr~(3+), Nb~(4+), Mo~(5+) and the lowest 5d level of Ta~(4+), and W~(5+) in various compounds are determined by means of the chemical shift model. They will be compared with the VRBE in the already established lowest 3d level of Ti~(3+) and the lowest 5d level of Eu~(2+) and Ce~(3+). Clear trends with changing charge of the transition metal (TM) cation and with changing principle quantum number n = 3, 4, or 5 of the nd level will be identified. This work will demonstrate that the trends correlate with the VRBE in the free ion nd TM cation level. The acquired knowledge on the VRBE of the electron in the nd TM impurity levels but also on TM based compounds with nd type of conduction band bottom provides new insight in the luminescence properties of TM activated compounds.
机译：Sc〜（2 +），V〜（4 +），Cr〜（5+）最低能级3d能级，Y〜（2+）最低能级3d能级的单电子真空参考结合能（VRBE） ），通过以下方法确定Zr〜（3 +），Nb〜（4 +），Mo〜（5+）和Ta〜（4+）和W〜（5+）的最低5d水平。化学位移模型。在确定的Ti〜（3+）最低3d水平和Eu〜（2+）和Ce〜（3+）最低5d水平上将它们与VRBE进行比较。将确定随着过渡金属（TM）阳离子电荷的变化以及nd阶的量子数n = 3、4或5的变化而产生的明显趋势。这项工作将证明在自由离子和TM阳离子水平上，趋势与VRBE相关。在nd TM杂质能级上电子的VRBE以及对具有nd型导带底类型的TM基化合物的了解，为TM活化化合物的发光性质提供了新的见识。

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