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首页> 外文期刊>ECS Journal of Solid State Science and Technology >Effect of Mg Doping on the Electrical Characteristics of High Performance IGZO Thin Film Transistors
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Effect of Mg Doping on the Electrical Characteristics of High Performance IGZO Thin Film Transistors

机译：镁掺杂对高性能IGZO薄膜晶体管电学特性的影响

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摘要

In this work, we report that the electrical characteristics of Indium-Gallium-Zinc-Oxide Thin Film Transistors (IGZO-TFTs) can be improved by Mg doping in the IGZO layer. Several composite IGZO/Mg-doped IGZO channel structures were employed. With appropriate Mg-doped IGZO thickness, the electrical properties such as mobility, subthreshold swing (S.S.) and on/off ratio can be significantly improved by Mg doping. Mg doping in IGZO layer can stabilize device performance whatever the device is stressed under positive gate bias or negative gate bias with illumination. By X-ray photoelectron (XPS) analysis, we observe the presence of Mg can change the oxygen bonding states and influence the properties of IGZO layer. The atomic percentage of Mg in the IGZO layer is about 6.53%. As a result, Mg doping is a useful method to enhance the performance and stability of IGZO-TFTs.
机译：在这项工作中，我们报告说，通过在IGZO层中掺入Mg，可以改善铟镓锌氧化物薄膜晶体管（IGZO-TFT）的电学特性。采用了几种复合的IGZO / Mg掺杂的IGZO沟道结构。使用适当的掺镁IGZO厚度，可以通过掺镁显着改善电性能，例如迁移率，亚阈值摆幅（S.S.）和开/关比。 IGZO层中的Mg掺杂可以稳定器件的性能，无论器件在带照明的正栅极偏置或负栅​​极偏置下受到应力。通过X射线光电子（XPS）分析，我们观察到Mg的存在可以改变氧键合状态并影响IGZO层的性能。 IGZO层中Mg的原子百分比约为6.53％。结果，Mg掺杂是增强IGZO-TFT的性能和稳定性的有用方法。

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