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首页> 外文期刊>ECS Journal of Solid State Science and Technology >Effect of Thermal Annealing and Swift Heavy Ion Irradiation on the Optical Properties of Indium Oxide Thin Films
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Effect of Thermal Annealing and Swift Heavy Ion Irradiation on the Optical Properties of Indium Oxide Thin Films

机译：热退火和快速重离子辐照对氧化铟薄膜光学性能的影响

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摘要

Indium oxide thin films were fabricated by electron beam evaporation method. Two different methods viz. thermal and ion irradiation were employed to tailor the structural and optical properties. One set of samples was annealed at various temperatures (300, 400, 500 and 600℃) to obtain the crystallinity. Another set of samples (as-deposited and 600℃ annealed film) was irradiated with 120 MeV Ag ions, at different ion fluences (i.e. 1 x 10~(11), 1 x 10~(12) and 1 x 10~(13) ions-cm~(-2)). The structural changes were monitored by X-ray diffraction and optical properties were investigated by using UV-visible spectroscopy and photoluminescence spectroscopy. Thermal annealing of as-deposited films leads to the improvement in crystalline indium oxide phase, whereas ion irradiation resulted in the formation of crystalline indium phase. Transparency of as-deposited films improves upon thermal annealing (from 70% to 89%) whereas, ion- irradiation of crystalline indium oxide film leads to a reduction in transparency (89% to 60%) at higher fluence. Moreover, irradiation of crystalline indium oxide film gives an emergence of a broad and highly intense PL emission peak in the visible region (~680 nm). Our results indicate that a desired combination of properties can be achieved by varying the ion fluence for the further possible applications in luminescence devices.
机译：用电子束蒸发法制备氧化铟薄膜。两种不同的方法。使用热和离子辐照来调整结构和光学性质。一组样品在不同温度（300、400、500和600℃）下退火以获得结晶度。另一组样品（沉积并经600℃退火的薄膜）以不同的离子通量（即1 x 10〜（11），1 x 10〜（12）和1 x 10〜（13）照射了120 MeV Ag离子。离子-cm〜（-2））。通过X射线衍射监测结构变化，并使用UV-可见光谱和光致发光光谱研究光学性质。沉积膜的热退火导致结晶铟相的改善，而离子辐照导致结晶铟相的形成。热退火时，沉积薄膜的透明度提高（从70％到89％），而结晶铟薄膜的离子辐照导致通量更高时透明度降低（89％到60％）。此外，结晶氧化铟膜的辐照在可见光区域（约680 nm）出现了一个宽而高强度的PL发射峰。我们的结果表明，可以通过改变离子注量来实现所需的性能组合，以在发光器件中进一步应用。

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