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首页> 外文期刊>ECS Journal of Solid State Science and Technology >Silicon Surface Passivation Technology for Germanium-Tin P-Channel MOSFETs: Suppression of Germanium and Tin Segregation for Mobility Enhancement
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Silicon Surface Passivation Technology for Germanium-Tin P-Channel MOSFETs: Suppression of Germanium and Tin Segregation for Mobility Enhancement

机译：锗锡P沟道MOSFET的硅表面钝化技术：抑制锗和锡偏析以提高迁移率

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摘要

We report a two-step silicon (Si) surface passivation technology for germanium-tin (Ge_(1-x)Sn_x) p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs), featuring an initial low temperature atomic-layer-epitaxy or passivation step to suppress the segregation of subsurface germanium (Ge) and tin (Sn) atoms into the first monolayer of the ultrathin Si passivation layer. Evidence of reduced Ge and Sn segregation into the ultrathin Si passivation layer is provided by angle-resolved X-ray photoelectron spectroscopy (ARXPS) measurement. As compared to a Si passivation process performed at a higher temperature (370°C), the two-step Si passivation process gives ~13% higher drive current in Geo.94Sno.06 pMOSFETs. It also achieved a high effective hole mobility μ_(eff) of 472 cm~2/V - s at inversion carrier density N_(inv) of 1 × 10~(13) cm~(-2). The two-step Si surface passivation technology enables the formation of high-quality gate stack on Ge_(1-x)Sn_x surface channel for high performance logic applications.
机译：我们报告了锗锡（Ge_（1-x）Sn_x）p沟道金属氧化物半导体场效应晶体管（pMOSFET）的两步硅（Si）表面钝化技术，该技术具有初始低温原子层-外延或钝化步骤以抑制表面锗（Ge）和锡（Sn）原子偏析到超薄Si钝化层的第一单层中。通过角度分辨X射线光电子能谱（ARXPS）测量提供了减少的Ge和Sn偏析到超薄Si钝化层中的证据。与在较高温度（370°C）下进行的Si钝化工艺相比，两步Si钝化工艺在Geo.94Sno.06 pMOSFET中的驱动电流提高了约13％。在反转载流子密度N_（inv）为1×10〜（13）cm〜（-2）的情况下，它还实现了472 cm〜2 / V-s的高有效空穴迁移率μ_（eff）。两步Si表面钝化技术可在Ge_（1-x）Sn_x表面通道上形成高质量栅极堆叠，以用于高性能逻辑应用。

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