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Phosphorus Profile Control in Ge by Si Delta Layers

机译:Siδ层对Ge中磷剖面的控制

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The impact of Si delta layer on phosphorus (P) diffusion in germanium (Ge) is investigated. A Ge cap / in-situ P-doped Ge / Ge buffer layer stack is deposited and post-annealed in a single wafer reduced pressure chemical vapor deposition (RPCVD) tool just after the deposition. The P doping level in Ge is ~5 x 10~(19) cm~(-3). In the case of samples without Si delta layer, P diffusion / segregation and desorption from the Ge surface happened during Ge cap layer deposition at 550℃ resulting in dopant dose reduction and profile broadening. By interposing the P-doped Ge layer by Si delta layers, the P diffusion is suppressed. The diffused P is piled-up at the position of the Si delta layers. The P diffusion suppression effect by the Si delta layer is observed after postannealing even at 650℃. This effect is pronounced by increasing the Si dose. XRD-reciprocal space mapping shows that the Si delta layer is pseudomorphic to the Ge lattice, indicating that the Si atoms are on lattice site. After postannealing, Si diffusion is observed but no Ge crystal degradation was evident. Enhanced Si diffusion is observed in presence of P. Based on these results, the P diffusion suppression is discussed considering replacement of substitutional Si by diffused P.
机译:研究了Siδ层对磷(P)在锗(Ge)中扩散的影响。在沉积之后,在单个晶片减压化学气相沉积(RPCVD)工具中沉积Ge盖层/原位P掺杂的Ge / Ge缓冲层堆叠并进行后退火。 Ge中的P掺杂水平为〜5×10〜(19)cm〜(-3)。对于没有Siδ层的样品,在550℃的Ge盖层沉积过程中,发生了P扩散/偏析和从Ge表面脱附的现象,从而导致掺杂剂剂量减少和轮廓展宽。通过将Si掺杂层插入P掺杂的Ge层,可以抑制P扩散。扩散的P堆积在Siδ层的位置。即使在650℃下进行退火后,也可以观察到Siδ层对P的扩散抑制作用。通过增加Si剂量可以明显地看出这种效果。 XRD互易空间映射显示Siδ层是Ge晶格的伪晶,表明Si原子在晶格位点上。后退火后,观察到Si扩散,但是没有观察到Ge晶体降解。在P存在下观察到增强的Si扩散。基于这些结果,讨论了考虑用扩散P代替取代Si的P扩散抑制。

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