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首页> 外文期刊>ECS Journal of Solid State Science and Technology >Investigation of Surface Band Bending of Ga-Face GaN by Angle-Resolved X-ray Photoelectron Spectroscopy
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Investigation of Surface Band Bending of Ga-Face GaN by Angle-Resolved X-ray Photoelectron Spectroscopy

机译：角分辨X射线光电子能谱研究Ga面GaN的表面能带弯曲

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摘要

The surface band bending of Ga-face n-type GaN is clarified via angle-resolved X-ray photoelectron spectroscopy (ARXPS) of test samples with and without hydrofluoric acid (HF) cleaning. For samples without HF cleaning, a slight downward band bending is obtained, indicating an accumulated GaN surface. On the other hand, a 0.3-eV upward band bending is observed on samples with HF cleaning, pointing to a depleted surface region. The change may be ascribed to the removal of the native gallium oxide (and the associated positive surface charges) by the HF etchant, thus resulting in the n-type GaN being depleted by the polarization-induced negative surface charges (previously compensated). Based on the ARXPS results and an electrostatics analysis, a net positive surface charge density of 2.09 x 10(12) cm(-2) is obtained for samples without HF cleaning, whereas a net negative surface charge density of 1.0 x 10(12) cm(-2) is obtained for samples with HF cleaning. (C) 2016 The Electrochemical Society. All rights reserved.
机译：通过使用和不使用氢氟酸（HF）清洁的测试样品的角度分辨X射线光电子能谱（ARXPS），可以清楚地了解Ga面n型GaN的表面带弯曲。对于未进行HF清洁的样品，会出现轻微的向下弯曲，表明GaN表面积聚。另一方面，在用HF清洗的样品上观察到0.3 eV的向上弯曲，指向耗尽的表面区域。该变化可归因于通过HF蚀刻剂去除了天然氧化镓（和相关的正表面电荷），从而导致n型GaN被极化感应的负表面电荷耗尽（先前被补偿）。根据ARXPS结果和静电分析，未经HF清洗的样品的净正表面电荷密度为2.09 x 10（12）cm（-2），而净负表面电荷密度为1.0 x 10（12）对于使用HF清洁的样品，可得到cm（-2）。 （C）2016年电化学学会。版权所有。

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