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首页> 外文期刊>International Journal of Minerals,Metallurgy and Materials >Evolution of insoluble eutectic Si particles in anodic oxidation films during adipic-sulfuric acid anodizing processes of ZL114A aluminum alloys
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Evolution of insoluble eutectic Si particles in anodic oxidation films during adipic-sulfuric acid anodizing processes of ZL114A aluminum alloys

机译：ZL114A铝合金己二酸阳极氧化过程中阳极氧化膜中不溶性共晶硅颗粒的演变

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摘要

The effects of insoluble eutectic Si particles on the growth of anodic oxide films on ZL114A aluminum alloy substrates were investigated by optical microscopy (OM) and scanning electron microscopy (SEM). The anodic oxidation was performed at 25A degrees C and a constant voltage of 15 V in a solution containing 50 g/L sulfuric acid and 10 g/L adipic acid. The thickness of the formed anodic oxidation film was approximately 7.13 mu m. The interpore distance and the diameters of the major pores in the porous layer of the film were within the approximate ranges of 10-20 nm and 5-10 nm, respectively. Insoluble eutectic Si particles strongly influenced the morphology of the anodic oxidation films. The anodic oxidation films exhibited minimal defects and a uniform thickness on the ZL114A substrates; in contrast, when the front of the oxide oxidation films encountered eutectic Si particles, defects such as pits and non-uniform thickness were observed, and pits were observed in the films.
机译：通过光学显微镜（OM）和扫描电子显微镜（SEM）研究了不溶性共晶硅颗粒对ZL114A铝合金基板上阳极氧化膜生长的影响。在包含50 g / L硫酸和10 g / L己二酸的溶液中，在25A摄氏度和15 V恒定电压下进行阳极氧化。形成的阳极氧化膜的厚度约为7.13μm。膜的多孔层中的孔间距离和主要孔的直径分别在大约10-20nm和5-10nm的范围内。不溶性共晶硅颗粒强烈影响阳极氧化膜的形貌。阳极氧化膜在ZL114A基板上的缺陷最少且厚度均匀。相反，当氧化物氧化膜的正面遇到共晶Si颗粒时，观察到诸如凹坑和厚度不均匀的缺陷，并且在膜中观察到凹坑。

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