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首页> 外文期刊>Electrical engineering in Japan >Comparative performance evaluations of IGBTs and MCT incorporated into voltage-source-type single-ended quasi-resonant zero-voltage soft switching inverter
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Comparative performance evaluations of IGBTs and MCT incorporated into voltage-source-type single-ended quasi-resonant zero-voltage soft switching inverter

机译:电压源型单端准谐振零电压软开关逆变器中IGBT和MCT的比较性能评估

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摘要

A cost-effective high-efficiency, simple, low-noise voltage-source-type Single-ended quasi-resonant high-frequency inverter using a single power semiconductor switching device and its modified circuit topologies are commonly applied to consumer induction-heated rice cookers with a warmer function, cooking heaters, and microwave ovens. This paper presents some comparative performance evaluations of several generations of IGBTs and MCT (MOS Controlled Thyristor) incorporated into the typical voltage-source quasi-resonant inverter operating in zero-voltage soft switching transition mode. The latest generation of IGBT upgraded by lowering the saturation voltage characteristics was designed for consumer power applications in order to reduce conduction losses. The comparative steady-state characteristics of some simple power semiconductor switching devices of several generations of IGBTs are examined on the basis of the simplest single-ended quasi-resonant inverter circuit operating tinder the zero-voltage soft switching commutating principle. In addition, the power losses and temperature performance analysis of the latest IGBT are discussed and evaluated relative to previously developed IGBTs. Finally, the further reduced saturation voltage and conduction loss characteristics of MCT which are more suitable for consumer utilizations are presented in comparison with the conventional IGBT.
机译:使用单个功率半导体开关器件的经济高效,简单,低噪声的电压源型单端准谐振高频逆变器及其修改后的电路拓扑通常应用于消费者感应加热的电饭煲带有加热功能,烹饪加热器和微波炉。本文介绍了几种IGBT和MCT(MOS控制晶闸管)的比较性能评估,这些IGBT和MCT并入了在零电压软开关过渡模式下运行的典型电压源准谐振逆变器中。通过降低饱和电压特性升级的最新一代IGBT专为消费类电源应用而设计,以减少传导损耗。基于最简单的单端准谐振逆变器电路的零电压软开关换向原理,研究了几代IGBT的一些简单功率半导体开关器件的比较稳态特性。此外,相对于以前开发的IGBT,讨论和评估了最新IGBT的功率损耗和温度性能分析。最后,与传统的IGBT相比,提出了更适合消费者使用的MCT饱和电压和传导损耗特性的进一步降低。

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