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首页> 外文期刊>Electroanalysis >Novel preparation and photoelectrochemical properties of gamma-CuI semiconductor nanocrystallites on screen-printed carbon electrodes
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Novel preparation and photoelectrochemical properties of gamma-CuI semiconductor nanocrystallites on screen-printed carbon electrodes

机译：丝网印刷碳电极上γ-CuI半导体纳米微晶的新型制备及其光电化学性能

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摘要

Cuprous iodide (gamma-CuI) is an important semiconductor material having a bang gap of 3.1 eV often used for visible light assisted photoelectrochemical and solar energy conservation systems. We report the first and unique preparation of fine and precisely controlled gamma-CuI semiconductor nanocrystallites on the surface of a screen-printed carbon electrode using a photoelectrochemical copper nanoparticle deposition method with tris(hydroxymethyl)aminomethane (Tris) buffer solution as a control medium. Tris buffer helps to split (Cu2O)-O-1 and COO oxidation states through specific complexation mechanism and in turn to selective iodination of (Cu2O)-O-1 to the formation of gamma-CuI on the electrode. Stable and linear photoelectrochemical response was further demonstrated against variable light intensity up to 400 Klux using the gamma-CuI modified system.
机译：碘化亚铜（γ-CuI）是一种重要的半导体材料，其Bang间隙为3.1 eV，通常用于可见光辅助的光电化学和太阳能节约系统。我们报告了使用光电化学铜纳米颗粒沉积方法，以三（羟甲基）氨基甲烷（Tris）缓冲溶液为控制介质，在丝网印刷碳电极表面上精细且精确控制的γ-CuI半导体纳米微晶的首次独特制备。 Tris缓冲液通过特定的络合机制有助于分裂（Cu2O）-O-1和COO氧化态，进而有助于（Cu2O）-O-1的选择性碘化，从而在电极上形成γ-CuI。使用γ-CuI修饰系统进一步证明了对于高达400 Klux的可变光强度，具有稳定且线性的光电化学反应。

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