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首页> 外文期刊>Electroanalysis >Cyclic voltammetric behavior of nitrogen-doped tetrahedral amorphous carbon films deposited by filtered cathodic vacuum arc
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Cyclic voltammetric behavior of nitrogen-doped tetrahedral amorphous carbon films deposited by filtered cathodic vacuum arc

机译：过滤阴极真空电弧沉积氮掺杂四面体非晶碳膜的循环伏安行为

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摘要

Nitrogen-doped tetrahedral amorphous carbon (ta-C:N) films were deposited by filtered cathodic vacuum are (FCVA) technique using nitrogen as a background gas. The structure of the ta-C:N films was studied with X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy in terms of nitrogen flow rate used during the film deposition. Potential windows of the films measured in deaerated and unstirred solutions, such as 0.5 M HCl, 0.1 M KCl, 0.1 M NaCl, 0.1 M KOH, and 0.1 M NaOH, were about 2.4, 2.32, 3.2 3.1, and 3.25 V, respectively. This study showed that the potential windows of the ta-C: N films were also affected by nitrogen flow rate. The ta-C: N films used in this study had the desired voltammetric characteristics suitable for electrochemical analysis.
机译：氮气掺杂的四面体非晶碳（ta-C：N）薄膜是通过使用氮气作为背景气体的过滤阴极真空（FCVA）技术沉积的。用X射线光电子能谱（XPS）和拉曼光谱研究了ta-C：N薄膜的结构，该薄膜的沉积过程中使用了氮气流速。在脱气和未搅拌的溶液（例如0.5 M HCl，0.1 M KCl，0.1 M NaCl，0.1 M KOH和0.1 M NaOH）中测得的膜的潜在窗口分别约为2.4、2.32、3.2 3.1和3.25V。这项研究表明，ta-C：N薄膜的潜在窗口也受氮气流速的影响。本研究中使用的ta-C：N薄膜具有适合电化学分析的所需伏安特性。

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